Gigahertz frequency hopping in an optical phase-locked loop for Raman lasers

Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman lasers.We demonstrate an innovative gigahertz frequency hopping approach of a slave Raman laser within an optical phase-locked loop(OPLL),which finds practical application in an atomic gravimeter,where the OPLL frequently switches between near-resonance lasers and significantly detuned Raman lasers.The method merges the advantages of rapid and extensive frequency hopping with the OPLL’s inherent low phase noise,and exhibits a versatile range of applications in compact laser systems,promising advancements in portable instruments.

Phase-locked single-mode terahertz quantum cascade lasers array

We demonstrated a scheme of phase-locked terahertz quantum cascade lasers(THz QCLs)array,with a single-mode pulse power of 108 mW at 13 K.The device utilizes a Talbot cavity to achieve phase locking among five ridge lasers with first-order buried distributed feedback(DFB)grating,resulting in nearly five times amplification of the single-mode power.Due to the optimum length of Talbot cavity depends on wavelength,the combination of Talbot cavity with the DFB grating leads to better power amplification than the combination with multimode Fabry-Perot(F-P)cavities.The Talbot cavity facet reflects light back to the ridge array direction and achieves self-imaging in the array,enabling phase-locked operation of ridges.We set the spacing between adjacent elements to be 220μm,much larger than the free-space wavelength,ensuring the operation of the fundamental supermode throughout the laser's dynamic range and obtaining a high-brightness far-field distribution.This scheme provides a new approach for enhancing the single-mode power of THz QCLs.

Characteristic analysis of 1.06μm long-cavity diode lasers based on asymmetric waveguide structures

In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.

Optical facet coatings for high-performance LWIR quantum cascade lasers atλ∼8.5μm

We report on the performance improvement of long-wave infrared quantum cascade lasers(LWIR QCLs)by studying and optimizing the anti-reflection(AR)optical facet coating.Compared to the Al2O3 AR coat⁃ing,the Y_(2)O_(3)AR coating exhibits higher catastrophic optical mirror damage(COMD)level,and the optical facet coatings of both material systems have no beam steering effect.A 3-mm-long,9.5-μm-wide buried-heterostruc⁃ture(BH)LWIR QCL ofλ~8.5μm with Y_(2)O_(3)metallic high-reflection(HR)and AR of~0.2%reflectivity coating demonstrates a maximum pulsed peak power of 2.19 W at 298 K,which is 149%higher than that of the uncoated device.For continuous-wave(CW)operation,by optimizing the reflectivity of the Y_(2)O_(3)AR coating,the maximum output power reaches 0.73 W,which is 91%higher than that of the uncoated device.

Optimizing laser coupling,matter heating,and particle acceleration from solids using multiplexed ultraintense lasers

Realizing the full potential of ultrahigh-intensity lasers for particle and radiation generation will require multi-beam arrangements due to technology limitations.Here,we investigate how to optimize their coupling with solid targets.Experimentally,we show that overlapping two intense lasers in a mirror-like configuration onto a solid with a large preplasma can greatly improve the generation of hot electrons at the target front and ion acceleration at the target backside.The underlying mechanisms are analyzed through multidimensional particle-in-cell simulations,revealing that the self-induced magnetic fields driven by the two laser beams at the target front are susceptible to reconnection,which is one possible mechanism to boost electron energization.In addition,the resistive magnetic field generated during the transport of the hot electrons in the target bulk tends to improve their collimation.Our simulations also indicate that such effects can be further enhanced by overlapping more than two laser beams.

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.

Collective coherent emission of electrons in strong laser fields and perspective for hard x-ray lasers

Coherent motion of particles in a plasma can imprint itself on radiation.The recent advent of high-power lasers—allowing the nonlinear inverse Compton-scattering regime to be reached—has opened the possibility of looking at collective effects in laser–plasma interactions.Under certain conditions,the collective interaction of many electrons with a laser pulse can generate coherent radiation in the hard x-ray regime.This perspective paper explains the limitations under which such a regime might be attained.

On the generation of high-quality Nyquist pulses in mode-locked fiber lasers

Nyquist pulses have wide applications in many areas,from electronics to optics.Mode-locked lasers are ideal platforms to generate such pulses.However,how to generate high-quality Nyquist pulses in mode-locked lasers remains elusive.We address this problem by managing different physical effects in mode-locked fiber lasers through extensive numerical simulations.We find that net dispersion,linear loss,gain and filter shaping can affect the quality of Nyquist pulses significantly.We also demonstrate that Nyquist pulses experience similariton shaping due to the nonlinear attractor effect in the gain medium.Our work may contribute to the design of Nyquist pulse sources and enrich the understanding of pulse shaping dynamics in mode-locked lasers.

Generation and regulation of electromagnetic pulses generated by femtosecond lasers interacting with multitargets

Ultrashort and powerful laser interactions with a target generate intense wideband electromagnetic pulses(EMPs).In this study,we report EMPs generated by the interactions between petawatt(30 fs,1.4×10^(20) W/cm^(2))femtosecond(fs)lasers with metal flat,plastic flat,and plastic nanowire-array(NWA)targets.Detailed analyses are conducted on the EMPs in terms of their spatial distribution,time and frequency domains,radiation energy,and protection.The results indicate that EMPs from metal targets exhibit larger amplitudes at varying angles than those generated by other types of targets and are enhanced significantly for NWA targets.Using a plastic target holder and increasing the laser focal spot can significantly decrease the radiation energy of the EMPs.Moreover,the composite shielding materials indicate an effective shielding effect against EMPs.The simulation results show that the NWA targets exert a collimating effect on thermal electrons,which directly affects the distribution of EMPs.This study provides guidance for regulating EMPs by controlling the laser focal spot,target parameters,and target rod material and is beneficial for electromagnetic-shielding design.

Wavelength-tunable organic semiconductor lasers based on elastic distributed feedback gratings

Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the distributed feedback gratings for fine tuning the lasing wavelength. Notably, elastic lasers based on three typical light-emitting molecules show com-parable lasing threshold values analogous to rigid devices and a continuous wavelength tunability of about 10 nm by mechanic-al stretching. In addition, the stretchability provides a simple solution for dynamically tuning the lasing wavelength in a spec-tral range that is challenging to achieve for inorganic counterparts. Our work has provided a simple and efficient method of fab-ricating tunable organic lasers that depend on stretchable distributed feedback gratings, demonstrating a significant step in the advancement of flexible organic optoelectronic devices.

Quantum cascade lasers grown by MOCVD

Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense applications.Metalorganic chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and repeatability.The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices.This review summarizes the recent progress of QCLs grown by MOCVD.Material quality and the structure design together determine the device performance.Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

The second fusion of laser and aerospace-an inspiration for high energy lasers

Since the first laser was invented,the pursuit of high-energy lasers(HELs)has always been enthusiastic.The first revolution of HELs was pushed by the fusion of laser and aerospace in the 1960s,with the chemical rocket engines giving fresh impetus to the birth of gas flow and chemical lasers,which finally turned megawatt lasers from dream into reality.Nowadays,the development of HELs has entered the age of electricity as well as the rocket engines.The properties of current electric rocket engines are highly consistent with HELs’goals,including electrical driving,effective heat dissipation,little medium consumption and extremely light weight and size,which inspired a second fusion of laser and aerospace and motivated the exploration for potential HELs.As an exploratory attempt,a new configuration of diode pumped metastable rare gas laser was demonstrated,with the gain generator resembling an electric rocket-engine for improved power scaling ability.

Applications of lasers:A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays

Micro-light-emitting diodes(micro-LEDs)with outstanding performance are promising candidates for next-generation displays.To achieve the application of high-resolution displays such as meta-displays,virtual reality,and wearable electronics,the size of LEDs must be reduced to the micro-scale.Thus,traditional technology cannot meet the demand during the processing of micro-LEDs.Recently,lasers with short-duration pulses have attracted attention because of their unique advantages during micro-LED processing such as noncontact processing,adjustable energy and speed of the laser beam,no cutting force acting on the devices,high efficiency,and low cost.Herein,we review the techniques and principles of laser-based technologies for micro-LED displays,including chip dicing,geometry shaping,annealing,laserassisted bonding,laser lift-off,defect detection,laser repair,mass transfer,and optimization of quantum dot color conversion films.Moreover,the future prospects and challenges of laser-based techniques for micro-LED displays are discussed.

Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.

High Slope Efficiency and High Power 850nm Oxide-Confined Vertical Cavity Surface Emitting Lasers

High slope efficiency and high power selected oxide-confined 850nm VCSELs grown by MOCVD are reported.The slope efficiency and the threshold current respectively are 0 82mW/mA and 2 59mA with a 9μm diameter oxidation aperture at 25℃.The maximum power of 16mW is obtained at 23mA current bias.The minimum threshold current can be as low as 570μA with a 5μm diameter oxidation aperture at 25℃.The maximum saturated power is 5 5mW.

Transmission effects of high energy nanosecond lasers in laser-induced air plasma under different pressures

When a high energy nanosecond(ns)laser induces breakdown in the air,the plasma density generated in the rarefied atmosphere is much smaller than that at normal pressure.It is associated with a relatively lower absorption coefficient and reduces energy loss of the laser beam at low pressure.In this paper,the general transmission characterizations of a Joule level 10 ns 1064 nm focused laser beam are investigated both theoretically and experimentally under different pressures.The evolution of the electron density(n_(e)),the changes in electron temperature(T_(e))and the variation of laser intensity(I)are employed for numerical analyses in the simulation model.For experiments,four optical image transfer systems with focal length(f)of 200 mm are placed in a chamber and employed to focus the laser beam and produce plasmas at the focus.The results suggest that the transmittance increases obviously with the decreasing pressure and the plasma channels on the transmission path can be observed by the self-illumination.The simulation results agree well with the experimental data.The numerical model presents that the maximum n_e at the focus can reach 10^(19)cm^(-3),which is far below the critical density(n_(c)).As a result,the laser beam is not completely shielded by the plasmas.

Deep-red and near-infrared organic lasers based on centrosymmetric molecules with excited-state intramolecular double proton transfer activity

Organic lasers that emit light in the deep-red and near-infrared(NIR)region are of essential importance in laser communication,night vision,bioimaging,and information-secured displays but are still challenging because of the lack of proper gain materials.Herein,a new molecular design strategy that operates by merging two excited-state intramolecular proton transfer-active molecules into one excited-state double proton transfer(ESDPT)-active molecule was demonstrated.Based on this new strategy,three new materials were designed and synthesized with two groups of intramolecular resonance-assisted hydrogen bonds,in which the ESDPT process was proven to proceed smoothly based on theoretical calculations and experimental results of steady-state and transient spectra.Benefiting from the effective six-level system constructed by the ESDPT process,all newly designed materials showed low threshold laser emissions at approximately 720 nm when doped in PS microspheres,which in turn proved the existence of the second proton transfer process.More importantly,our well-developed NIR organic lasers showed high laser stability,which can maintain high laser intensity after 12000 pulse lasing,which is essential in practical applications.This work provides a simple and effective method for the development of NIR organic gain materials and demonstrates the ESDPT mechanism for NIR lasing.

Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect

Modulation bandwidth enhancement in a directly modulated two-section distributed feedback(TS-DFB)laser based on a detuned loading effect is investigated and experimentally demonstrated.The results show that the 3-dB bandwidth of the TS-DFB laser is increased to 17.6 GHz and that chirp parameter can be reduced to 2.24.Compared to the absence of a detuned loading effect,there is a 4.6 GHz increase and a 2.45 reduction,respectively.After transmitting a 10 Gb/s non-return-to-zero(NRZ)signal through a 5-km fiber,the modulation eye diagram still achieves a large opening.Eight-channel laser arrays with precise wavelength spacing are fabricated.Each TS-DFB laser in the array has side mode suppression ratios(SMSR)>49.093 dB and the maximum wavelength residual<0.316 nm.

High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.

Investigation of 980nm Ridge Waveguide Lasers with Current Non-Injection Regions by He Ion Implantaion

The technology of He ion implantation for improving the catastrophic optical damage (COD) level of 980nm semiconductor lasers is introduced.After He ion implantation,p-GaAs obtain higher resistivity than before.About 25μm-long current non-injection regions are introduced near both facets,where the injection current is blocked by high resistivity area.The current non-injection regions can reduce carriers inject to facets,and the rate of the non-radiative recombination are reduced.So the COD level is higher than before.The He ion implantation LDs exhibit no COD failure until the rollover occure at a mean maximum power of 440.5mW.Mean COD level of conventional LDs is given as 407.5mW.Compared to conventional LDs,the mean maximum output power level of He ion implantation LDs is improved by 8%.