Temperature and metal composition dependence of lateral photovoltaic effect in Al-Alq_3/SiO_2/Si structures

A series of Al=-（Alq3）l-x granular films is prepared on Si wafer with native oxide layer using co-evaporation technique. Large lateral photovoltaic effect （LPE） is observed, with an optimal LPV sensitivity of 75 mV/mm in x=0.35 sample. The dependence of LPE on temperature and A1 composition is investigated, and the possible mechanism is discussed.

Near-infrared lateral photovoltaic effect of epitaxial LaTiO--_(3+δ) films under high pressure

A lateral photovoltaic effect （LPE） is discovered in an LaTiO3＋8 film epitaxially grown on a （100） SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3＋δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3＋δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO3＋δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.

Infrared laser-induced fast photovoltaic effect observed in orthorhombic tin oxide film

The SnO_2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infrared laser induced a fast photovoltaic effect arising from orthorhombic tin oxide film with an indirect band gap（~2.4 e V） which is deposited by pulsed laser deposition. The rising time of the photovoltaic signal is about 3 ns with a peak value of 4.48 mV under the pulsed laser beam with energy density 0.015 m J/mm^2. The relation between the photovoltages and laser positions along the line between two electrodes of the film is also exhibited. A possible mechanism is put forward to explain this phenomenon.All data and analyses demonstrate that the orthorhombic tin oxide with an indirect band gap could be used as a candidate for an infrared photodetector which can be operated at high pressures and temperatures.

Ultrasensitive broadband position-sensitive detector based on graphitic carbon nitride

As a typical two-dimensional material,graphitic carbon nitride(g-CN)has attracted great interest because of its distinctive electronic,optical,and catalytic properties.However,the absence of a feasible route toward large-area and high-quality films hinders its development in optoelectronics.Herein,high-quality g-CN films have been grown on Si substrate via a vapor-phase transport-assisted condensation method.The g-CN/Si heterojunction shows an obvious response to ultraviolet–visible-near infrared photons with a responsivity of 133 A·W−1,which is two orders of magnitude higher than the best value ever reported for g-CN photodetectors.A position-sensitive detector(PSD)has been developed using the lateral photovoltaic effect of the g-CN/Si heterojunction.The PSD shows a wide response spectrum ranging from 300 to 1,100 nm,and a position sensitivity and rise/decay time of 395 mV·mm−1 and 3.1/50μs,respectively.Moreover,the application of the g-CN/Si heterojunction photodetector in trajectory tracking and acoustic detection has been realized for the first time.This work unveils the potential of g-CN for large-area photodetectors,and prospects for their applications in trajectory tracking and acoustic detection.

Position-sensitive detectors based on two-dimensional materials

Two-dimensional(2D)materials have attracted great attention in optoelectronics because of their unique structure,optical and electrical properties.Designing high-performance photodetectors and implementing their applications are eager to promote the development of 2D materials.Position-sensitive detector(PSD)is an optical inspection device for the precise measurements of position,distance,angle,and other relevant physical variables.It is a widely used component in the fields of tracking,aerospace,nanorobotics,and so forth.Essentially,PSD is also a photodetector based on the lateral photovoltaic effect(LPE).This article reviews recent progress in high-performance PSD based on 2D materials.The high-sensitive photodetectors and LPE involved in 2D photodetectors are firstly discussed.Then,we introduce the research progress of PSD based on 2D materials and analyze the carrier dynamics in different device structures.Finally,we summarize the functionalities and applications of PSD based on 2D materials,and highlight the challenges and opportunities in this research area.