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H-plasma In-situ Cleaning and Lattice Damage Elimination
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作者 Chenguang GONG+ Fuchu SHEN +1 位作者 Biguang YE Jian CHEN, Zhenjiang University, Hangzhou, 310027, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1993年第2期133-135,共3页
This article discusses the silicon lattice damage induced during H-plasma in-situ cleaning and finds that the substrate temperature, plasma power, processing time, all affect the extent of the distortion of the surfac... This article discusses the silicon lattice damage induced during H-plasma in-situ cleaning and finds that the substrate temperature, plasma power, processing time, all affect the extent of the distortion of the surface and its curability. 展开更多
关键词 H-plasma cleaning lattice damage EPITAXIAL Si film
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