Mechanical and Electrical Properties of Some Sn-Zn Based Lead-Free Quinary Alloys

Although there are many lead-free soldering alloys on the market, none of them have ideal qualities. The researchers are combining binary alloys with a variety of additional materials to create the soldering alloys’ features. The eutectic Sn-9Zn alloy is among them. This paper investigated the mechanical and electrical properties of Sn-9Zn-x (Ag, Cu, Sb);{x = 0.2, 0.4, and 0.6} lead-free solder alloys. The mechanical properties such as elastic modulus, ultimate tensile strength (UTS), yield strength (YS), and ductility were examined at the strain rates in a range from 4.17 10−3 s−1 to 208.5 10−3 s−1 at room temperature. It is found that increasing the content of the alloying elements and strain rate increases the elastic modulus, ultimate tensile strength, and yield strength while the ductility decreases. The electrical conductivity of the alloys is found to be a little smaller than that of the Sn-9Zn eutectic alloy.

Effect of Strain Rate on Tensile Behavior of Sn-9Zn-xAg-ySb;{(x, y) = (0.2, 0.6), (0.2, 0.8), (0.6, 0.2), (0.8, 0.2)} Lead-Free Solder Alloys

The tensile properties of Sn-9Zn-xAg-ySb;{(x, y) = (0.2, 0.6), (0.2, 0.8), (0.6, 0.2), (0.8, 0.2)} lead-free solders were investigated. All the test samples were annealed at 150°C for 1 hour. The tests are carried out at room temperature at the strain rate of 4.17 × 10-3 s-1, 20.85 × 10-3 s-1, and 208.5 × 10-3 s-1. It is seen that the tensile strength increases and the ductility decrease with increasing the strain rate over the investigated range. From the strain rate change test results, the strain sensitivity values are found in the range of 0.0831 to 0.1455 due to the addition of different alloying elements.

添加Sb对Sn-9Zn-3Bi/Cu钎料接头显微组织及力学性能的影响

采用钎料合金化研究添加Sb对Sn-9Zn-3Bi无铅焊点组织、熔点特性、润湿性、金属间化合物(IMC)厚度和剪切强度的影响。结果表明:钎料的熔点随Sb含量的增加而略微上升,钎料的铺展面积随Sb含量的增加从50.3 mm^(2)降低至36.6 mm^(2);添加Sb虽然没有改变焊点处钎料基体和界面IMC的显微组织类型,但细化了焊点显微组织,且焊点界面处的IMC厚度从18.6μm降低至16.8μm。随着钎料中Sb含量从0增加到1.5%(质量分数),Sn-9Zn-3Bi/Cu接头剪切强度从22.7 MPa增加到29.8 MPa,剪切强度的提高是显微组织细化、固溶强化及界面处IMC厚度降低共同作用的结果。

Effects of phosphorus addition on the properties of Sn-9Zn lead-free solder alloy

This article explores tile effects of phosphorus addition on the wettability between Sn-9Zn solder alloy and Cu substrates, the oxidation behavior and the corrosion behavior of Sn-9Zn solder alloy. Spreading test was used to characterize the wettability of Sn-9Zn-xP solder alloys to Cu substrates. The oxidation and corrosion behaviors of Sn- 9Zn-xP solder alloys were determined by means of weight gaining, and secondary ion mass spectrometry was used to analyze the oxygen content. The role and mechanism of P in the solder alloys were also discussed. It is found that the addition of P can significantly improve the wettability of the solder alloys. Incorporating P into Sn-9Zn solder alloy obviously decreases the oxygen content and enhances the oxidation and corrosion resistance. Microstructure observations show that an appropriate amount of P can greatly refine coarse rod-like Zn-rich phases in Sn-gZn solder alloy.

Effect of diode-laser parameters on shear force of micro-joints soldered with Sn-Ag-Cu lead-free solder on Au/Ni/Cu pad

Soldering experiments with Sn-3.5Ag-0.5Cu lead-free solder on Au/Ni/Cu pad were carried out by means of diode-laser and IR reflow soldering methods respectively.The influence of different heating methods as well as output power of diode-laser on shear force of micro-joints was studied and the relationship between the shear force and microstructures of micro-joints was analyzed.The results indicate that the formation of intermetallic compound Ag3Sn is the key factor to affect the shear force and the fine eutectic network structures of micro-joints as well as the dispersion morphology of fine compound Ag3Sn,in which eutectic network band is responsible for the improvement of the shear force of micro-joints soldered with Sn-Ag-Cu lead-free solder.With the increases of output power of diode-laser,the shear force and the microstructures change obviously.The eutectic network structures of micro-joints soldered with diode-laser soldering method are more homogeneous and the grains of Ag3Sn compounds are finer in the range of near optimal output power than those soldered with IR reflow soldering method,so the shear force is also higher than that using IR reflow soldering method.When the output power value of diode-laser is about 41.0 W,the shear force exhibits the highest value that is 70% higher than that using IR reflow soldering method.

Effect of cerium on microstructure and mechanical properties of Sn-Ag-Cu system lead-free solder alloys

The melting point, spreading property, mechanical properties and microstructures of Sn-3.0Ag-2.8Cu solder alloys added with micro-variable-Ce were studied by means of optical microscopy, scanning electron microscopy(SEM) and energy dispersive X-ray(EDX). The results indicate that the melting point of Sn-3.0Ag-2.8Cu solder is enhanced by Ce addition; a small amount of Ce will remarkably prolong the creep-rupture life of Sn-3.0Ag-2.8Cu solder joint at room temperature, especially when the content of Ce is 0.1%, the creep-rupture life will be 9 times or more than that of the solder joint without Ce addition; the elongation of Sn-3.0Ag-2.8Cu solder is also obviously improved even up to 15.7%. In sum, the optimum content of Ce is within 0.05%-0.1 %.

Research progress in lead-less or lead-free three-dimensional perovskite absorber materials for solar cells

The trend toward lead-free or lead-less perovskite solar cells(PSCs) has attracted increasing attention over the past few years because the toxicity of lead(Pb) is one of the substantial restrictions for large-scale applications. Researchers have investigated the viability of substituting Pb with other elements(group 14 elements, group 2 elements, transition-metal elements, and group 13 and 15 elements) in the three-dimensional(3 D) perovskites by theoretical calculations and experimental explorations. In this paper, recent research progress in Pb-less and Pb-free PSCs on the perovskite compositions, deposition methods, and device structures are summarized and the main problems that hinder the enhancement of device efficiency and stability are discussed in detail. To date, the fully Sn-based PSCs have shown a power conversion efficiency(PCE) of 8.12% and poor device stability. However, lead-less PSCs have shown higher PCE and a better stability. In addition, the introduction of double-perovskite materials also draws researchers' attention. We believe that the engineering of elemental composition, perovskite deposition methods, and interfacial modification are critical for the future development of Pb-less and Pb-free PSCs.

Formation of Bulk Intermetallic Compound AgaSn in Slowly-Cooled Lead-Free Sn-4.0 wt pct Ag Solders

Sn-Ag alloy system has been regarded as one of the most promising lead-free solder to substitute conventional Sn- Pb eutectic solder. But the formation of bulk Ag3Sn intermetallic compounds （IMCs） during reflow and post heat treatment significantly influences the performance of the solder joints. With an effort to clarify its microstructural evolution as a function of slow cooling rates, the fraction of bulk IMCs within the slowly solidified Sn-4.0 wt pct Ag solder was investigated by standard metallographic and compared with that detected by thermal analysis. It was found that the bulk IMCs fraction determined by thermal analysis corresponds quite well with the microstructure observation results. In accordance with the conventional solidification theory, the lower the applied cooling rate, the fewer the amount of bulk Ag3Sn IMCs formed in Sn-4.0 wt pct Ag alloy. In addition, Vickers hardness measurement results indicated that the relative coarse eutectic Ag3Sn IMCs distributing in the lamellar eutectic structure favored the improvement of the mechanical performance.

Gd^(3+)掺杂调控BiFeO_(3)-BaTiO_(3)高温无铅压电陶瓷的结构与性能

用于监测航空发动机、重型燃气轮机等重大技术装备高温部件振动状态的压电加速度传感器,需要一种高居里温度压电陶瓷作为敏感元件,而电子元器件的无铅化是环境保护的迫切要求。采用传统的固相反应法制备一种Gd/Mn共掺杂的BF-BT((0.67BiFeO_(3)-0.33Ba_(1-x)Gd_(x)TiO_(3))+0.5%(质量分数)MnO_(2),x=0~0.02)高温无铅压电陶瓷,并研究Gd^(3+)掺杂浓度(x)对BF-BT陶瓷的相组成、微观结构、压电性能、介电弛豫行为及交流阻抗特征的影响。结果表明:所有样品均为单一钙钛矿结构,三方相(R)和四方相(T)共存,且T相含量随x增加而增加;适量的Gd^(3+)(x<0.02)固溶进入钙钛矿点阵之中能够促进BF-BT陶瓷晶粒的生长。掺杂Gd^(3+)的样品表现出增强的弛豫相变行为,相变温度(T_m)随x的增加而减小,而介电弛豫程度(ΔT_(relax))随x的增加而增大。采用R-CPE等效电路模型对BF-BT陶瓷的高温复阻抗谱(Cole-Cole图)进行拟合分析,发现样品在高温下的交流阻抗主要来自晶界的贡献。并且随着Gd^(3+)掺杂浓度的提高,样品的介电弛豫激活能不断增大,证实Gd^(3+)取代Ba^(2+)减少了晶格中氧空位浓度的施主掺杂效应。综合来看,x=0.01的样品具有最优的电学性能:T_(C)=425℃,d_(33)=126 pC/N,k_(p)=25.9%,tanδ=0.059,有望作为一种合适的高温压电材料被应用。

Effects of Ga,Al,Ag,and Ce multi-additions on the wetting characteristics of Sn-9Zn lead-free solder

An orthogonal method was used to evaluate the effects of Ga, Al, Ag, and Ce multi-additions on the wetting characteristics of Sn-9Zn lead-free solders by wetting balance method. The results show that the optimal loading of Ga, Al, Ag, and Ce was 0.2 wt.%, 0.002 wt.%, 0.25 wt.%, and 0.15 wt.%, respectively. Intermetallic compounds （IMCs） formed at the interface between Sn-9Zn-0.2Ga-0.002Al-0.25Ag- 0.15Ce solder and Cu substrate were investigated by scanning electron microscope （SEM） and energy dispersive spectroscopy （EDS） analysis. The SEM images illustrate that the IMCs can be divided into two portions from the substrate side to the solder side： a planar CusZns layer and an additional continuous scallop-like AgZn3 layer. The EDS analysis also shows that Ga segregates in the solder abutting upon the interface. X-ray photoelectron spectroscopy （XPS） and Auger electron spectroscopy （AES） of the surface components of Sn-9Zn-0.2Ga-0.002Al- 0.25Ag-0.15Ce solder indicate that Al aggregates at the surface in the form of Al203 protective fdm, which prevents the further oxidation of the solder surface. On the other hand, Ce aggregates at the subsurface, which may reduce the surface tension of the solder and improve the wettability in consequence.

Influence of Composition on Properties of BNT-BT Lead-Free Piezoceramics

Lead-free piezoelectric ceramics of (Bi1/2Na1/2)TiO3-BaTiO3(BNT-BT) were prepared by the conventional piezoelectric ceramic preparation technique (free air atmosphere sintering). The influence of BaTiO3 additive amount and La2O3 additive amount on the properties of BNT-BT lead-free piezoceramics were investigated. The results show that the dielectric constant(ε) and piezoelectric strain constant(d33) of materials start increasing and then decreasing while BaTiO3 additive amount increasing, the e and d33 of materials have maximum value (ε= 1650, d33 = 120 PC·N -1 ) while x (BaTiO3) =0.06 mol. Theεand d33 of materials start increasing and then decreasing while La2O3 additive amount increasing, the e and d33 of materials have maximum value (ε= 1684, d33 = 153 PC·N-1) while w(La2O3) =0.3% . The influence of La2O3 additive amount on the microstructure of BNT-BT piezoelectric ceramics was analysed by SEM( scanning electron microscope). The influence mechanism of La2O3 additive amount on the properties of BNT-BT piezoelectric ceramics was discussed. The BNT-BT ceramics with optimum comprehensive properties were obtained.

Mechanical properties of QFP micro-joints soldered with lead-free solders using diode laser soldering technology

Soldering experiments of quad flat package(QFP) devices were carried out by means of diode laser soldering system with Sn-Ag-Cu and Sn-Cu-Ni lead-free solders, and competitive experiments were also carried out not only with Sn-Pb eutectic solders but also with infrared reflow soldering method. The results indicate that under the conditions of laser continuous scanning mode as well as the fixed laser soldering time, an optimal power exists, while the optimal mechanical properties of QFP micro-joints are gained. Mechanical properties of QFP micro-joints soldered with laser soldering system are better than those of QFP micro-joints soldered with IR reflow soldering method. Fracture morphologies of QFP micro-joints soldered with laser soldering system exhibit the characteristic of tough fracture, and homogeneous and fine dimples appear under the optimal laser output power.

Effects of cooling rates on microstructure and microhardness of lead-free Sn-3.5%Ag solders

The microstructure and microhardness of Sn-3.5%Ag solders were explored in the cooling rate ranging from 0.08 to 104 K/s. Under rapid cooling condition, the strong kinetic undercooling effect leads to the actual solidification process starting at the temperature lower than the equilibrium eutectic point, and the actual metastable eutectic point shifts to the higher Ag concentration. Hence, the higher the applied cooling rate is, the more the volume fraction of primary β-Sn crystal forms. At the same time, the separation of primary β-Sn crystal favors restraining the formation of bulk Ag3Sn intermetallic compounds (IMCs) in solder due to the mismatch crystalline orientation relationship, those Ag3Sn phase separating through the eutectic reaction could hardly cling to the primary β-Sn crystal and grow up. Additionally, the Vickers hardness test shows that fine β-Sn and spherical Ag3Sn phase in the rapidly solidified alloy strongly improves the microhardness of the Sn-3.5%Ag solder.

Preparation and Piezoelectric Properties of CuO-added(Ag_(0.75)Li_(0.1)Na_(0.1)K_(0.05_)NbO_3 Lead-free Ceramics

CuO-doped（Ag0.75Li0.1Na0.1K0.05）NbO3（ALNKN-xCuO, x = 0.2mol%） lead-free piezoelectric ceramics were prepared by the solid-state reaction method in air atmosphere. The effects of CuO addition on the phase structure, microstructure, and piezoelectric properties of the ceramics were investigated. The experimental results show that the ALNKN ceramics without doping CuO possess rhombohedral phase along with K2NbrO16- type phase and metallic silver phase. For all of the CuO-doped ALNKN ceramics, a pure perovskite structure with the orthorhombic phase was obtained by enclosing the samples in a corundum tube. A homogeneous microstructure with＇the grain size of about 1 ~tm was formed for the ceramics with 0.5mo1% CuO. The grain size increases with increasing amount of CuO. The temperature dependence of dielectric properties indicates that the ferroelectric phase of the ALNKN-xCuO ceramics becomes less stable with the addition of CuO. The ceramics with x = lm01% exhibit relatively good electrical properties along with a high Curie temperature. These results will provide a helpful guidance to preparing other AN-based ceramics by solid-state reaction method in air atmosphere.

Manufacture and Cytotoxicity of a Lead-free Piezoelectric Ceramic as a Bone Substitute—Consolidation of Porous Lithium Sodium Potassium Niobate by Cold Isostatic Pressing

Aim The piezoelectric properties and cytotoxicity of a porous lead-free piezoelectric ceramic for use as a direct bone substitute were investigated. Methodology Cold isostatic pressing （CIP） was applied to fabricate porous lithium sodium potassium niobate （Li0.06Na0.5K0.44） NbO3 specimens using a pore-forming method. The morphologies of the CIP-processed specimens were characterized and compared to those of specimens made by from conventional pressing procedures. The effects of the ceramic on the attachment and proliferation of osteoblasts isolated from the cranium of 1-day-old Sprague- Dawley rats were examined by a scanning electron microscopy （SEM） and metbylthiazol tetrazolium （MTT） assay. Results The results showed that CIP enhanced piezoelectricity and biological performance of the niobate specimen, and also promoted an extracellular matrix-like topography of it. In vitro studies showed that the CIP-enhanced material had positive effects on the attachment and proliferation of osteoblasts. Conclusion Niobate ceramic generated by CIP shows a promise for being a piezoelectric composite bone substitute.

EVOLUTION OF MICROSTRUCTURE OF Sn-Ag-Cu LEAD-FREE FLIP CHIP SOLDER JOINTS DURING AGING PROCESS

Flip chip bonding has become a primary technology that has found application in the chip interconnection process in the electronic manufacturing industry in recent years. The solder joints of the flip chip bonding are small and consist of complicated microstructures such as Sn solution, eutectic mixture, and intermetallic compounds （IMCs）, whose mechanical performance is quite different from the original solder bulk. The evolution of microstructure of the flip chip solder joints under thermal aging was analyzed. The results show that with an increase in aging time, coarsening of solder bulk matrix and AuSn4 IMCs occurred within the solder. The IMCs that are formed at the bottom side of the flip chip bond were different from those on the top side during the aging process. （Cu, Ni, Au）0Sn5 were formed at the interfaces of both sides, and large complicated （Au,Ni, Cu）Sn4 IMCs appeared for some time near the bottom interface after aging, but they disappeared again and thus （Cu,Ni, Au ）0Sn5 IMC thickness increased considerably. The influence of reflow times during the flip chip bonding （as-bonded condition） on the characteristics of interfacial IMCs was weakened when subjected to the aging process.

Effect of Li content on the microstructure and properties of lead-free piezoelectric(K_(0.5)Na_(0.5))_(1-x)Li_xNbO_3 ceramics prepared by SPS

Lead-free piezoelectric （K0.5sNa0.5）1-xLixNbO3 （x = 0at%-20at%） ceramics were synthesized by spark plasma sintering （SPS） at low temperature and the effects of LiNbO3 addition on its crystal structure and properties were also studied. When the Li content was less than 6at%, a single proveskite phase with the similar structure of （K0.5Na0.5）NbO3 was formed; and a secondary phase with K3Li2Nb5O15 structure was observed in the 6at% 〈 x 〈 20at% compositional range. Furthermore, LiNbO3 existed as the third phase when the Li content was higher than 8at%. The grain sizes increased from 200-500 nm to 5-8 μm when the K3Li2Nb5O15 and LiNbO3 like phases were formed. With increasing Li content, the relative density of the ceramics first decreased from 97% to 93% and then kept constant. The piezoelectric coefficient d33, dielectric constant, and planner electromechanical coupling factor exhibited a decreasing tendency with increasing Li content because of the decrease in density and the formation of the secondary phase such as K3Li2Nb5O15 and LiNbO3. The formation of dense microstructure with a single phase is necessary in improving the properties of the （K0.5Na0.5）1-xLixNbO3 ceramics.

Influences of Ag and Au Additions on Structure and Tensile Strength of Sn-5Sb Lead Free Solder Alloy

It is important, for electronic application, to decrease the melting point of Sn-5Sb solder alloy because it is relatively high as compared with the most popular eutectic Pb-Sn solder alloy. Adding Au or Ag can decrease the onset melting temperature （233℃） of this alloy to 203,5℃ and 216℃, respectively. The results indicate that the Sn-5Sb-i.5Au alloy has very good ultimate tensile strength （UTS）, ductility, and fusion heat, which are better than both those of the Sn-5Sb-3.SAg and Sn-5Sb alloys. The formation of intermetallic compounds （IMCs） AuSn4 and Ag3Sn enhanced the SbSn precipitates in the solidification microstructure microstructure stability, while retained the formation of thus significantly improved the strength and ductility For all alloys, both UTS and yield stress （σy） increase with increasing strain rate and decrease with increasing temperature in tensile tests, but changes of ductility are generally small with inconsistent trends.

BaTiO_(3-x)Bi(Mg_(2/3)Sb_(1/3))O_(3)陶瓷的储能特性研究

采用固相法制备了(1-x)BaTiO_(3-x)Bi(Mg_(2/3)Sb_(1/3))O_(3)(x=0,0.08,0.12,0.16)(BT-x BMS)陶瓷。系统研究了不同含量的BMS对BT基陶瓷的微观形貌、结构、介电和铁电性能的影响。结果表明:BT-x BMS陶瓷为单一的钙钛矿结构。随着BMS含量的增加,BT-x BMS陶瓷呈现出细化的晶粒尺寸,同时从正常铁电体逐渐转变为弛豫型铁电体。此外,BT-x BMS陶瓷的剩余极化显著降低,有助于获得优异的储能性能。当x=0.12时,在460 kV·cm-1的电场下获得最优的可回收储能密度(W_(rec)=3.06 J·cm^(-3))和储能效率(η=94.02%)。结果表明BT-x BMS陶瓷在介电电容器领域具有巨大的应用前景。

BaTiO_(3)-Bi(Zn_(3/4)W_(1/4))O_(3)无铅弛豫铁电陶瓷的制备及其储能性能的研究

采用固相反应法制备了(1-x)BaTiO_(3-x)Bi(Zn_(3/4)W_(1/4))O_(3)[简称(1-x)BT-x BZW]无铅陶瓷电容器。X射线衍射结果表明,所制得的陶瓷均为钙钛矿结构,没有发现第二相的生成。随着BZW的引入使得BaTiO 3陶瓷的晶相结构由四方相转变为伪立方相。采用SEM观察样品的晶粒尺寸和陶瓷表面的致密度,并对晶粒尺寸进行统计分析,陶瓷的平均晶粒尺寸从x=0.05时的2.36μm逐渐增大到x=0.20时的5.93μm。根据P-E曲线(电滞回线)可以观察到,添加适当量的BZW是调节BT弛豫行为的有效方法,能够有效提高陶瓷的储能性能。当掺杂量为x=0.15时,陶瓷具有最佳的储能特性,0.85BT-0.15BZW陶瓷的储能密度W rec为1.14 J/cm^(3),储能效率η可达92.60%,同时具有优异的温度和频率稳定性。因此,(1-x)BT-x BZW陶瓷有望成为制造高稳定性的储能设备的潜在候选材料。