We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and...We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and V_（DS） = 5 V.The threshold voltage is measured to be ＋0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×10^（17） A/mm is measured at V_（GS） =-15 V.展开更多
基金supported by the National Natural Science Foundation of China(Nos.10990102,60890192,60876009)
文摘We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and V_（DS） = 5 V.The threshold voltage is measured to be ＋0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×10^（17） A/mm is measured at V_（GS） =-15 V.
