LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluo...LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti： LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively： The peaks at 716nm and 798nm may stem from the VLi^＋ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4＋-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.展开更多
γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high...γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum （FWHM） of 17.7-22.6 arcsec and etch pits density of （0.3- 2.2）×10^4 cm^-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5μm and becomes completely absorbing around 6.7μm wavelength, The optical absorption edge in near UV region is about 191 nm.展开更多
This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman ...This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.展开更多
用高温固相合成法制得Li Al O2:Fe3+,通过正交实验确定最佳含量和反应条件:1 mol体系中,n(Li)/n(Al)=0.93,n(Fe)=0.006 mol,并在1470℃下灼烧3h。XRD分析确证为四方晶系。在λem=743nm监测下,激发光谱峰为266nm;且在λex=266nm的激发下...用高温固相合成法制得Li Al O2:Fe3+,通过正交实验确定最佳含量和反应条件:1 mol体系中,n(Li)/n(Al)=0.93,n(Fe)=0.006 mol,并在1470℃下灼烧3h。XRD分析确证为四方晶系。在λem=743nm监测下,激发光谱峰为266nm;且在λex=266nm的激发下,发射光谱峰为743nm,色坐标x=0.7352,y=0.2648。展开更多
本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括-γL iA lO2、r面蓝宝石等。通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,...本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括-γL iA lO2、r面蓝宝石等。通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,发展非极性面外延,有望克服这一物理现象,使发光效率提高。展开更多
文摘LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti： LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively： The peaks at 716nm and 798nm may stem from the VLi^＋ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4＋-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.
基金supported by the Project of High Technology Research and Development of China(2006AA03A101 and 2006AA03A103)the National Natural Science Foundation of China(60676004)the Science Research Program of Shanghai(05PJ14100 and 06dz11402).
文摘γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum （FWHM） of 17.7-22.6 arcsec and etch pits density of （0.3- 2.2）×10^4 cm^-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5μm and becomes completely absorbing around 6.7μm wavelength, The optical absorption edge in near UV region is about 191 nm.
文摘This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.
文摘用高温固相合成法制得Li Al O2:Fe3+,通过正交实验确定最佳含量和反应条件:1 mol体系中,n(Li)/n(Al)=0.93,n(Fe)=0.006 mol,并在1470℃下灼烧3h。XRD分析确证为四方晶系。在λem=743nm监测下,激发光谱峰为266nm;且在λex=266nm的激发下,发射光谱峰为743nm,色坐标x=0.7352,y=0.2648。
文摘本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括-γL iA lO2、r面蓝宝石等。通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,发展非极性面外延,有望克服这一物理现象,使发光效率提高。
