Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters

We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92.

Synthesis and luminescent properties of polycrystalline Gd_2(MoO_4)_3:Dy^(3+) for white light-emitting diodes

Polycrystalline Gd2(MoO4)3:Dy3+ phosphors have been synthesized by high temperature solid-state reaction method. The phosphors were characterized with X-ray diffractometer, thermogravimetric analysis and different scanning calorimeter, scanning electron microscopy, and photoluminescence spectrofluorimeter. Several peaks at 351, 389, 425, 452, and 472 nm appeared in photoluminescence excitation spectrum, which matched well with the emission of the ultraviolet (UV) and blue-light emitting diode (LED) chips. Upon excitation at 389 nm UV light, intense emissions centered at 484, 575 and 668 nm were attributed to the transitions of 4F9/2→6H15/2, 4F9/2→6H13/2 and 4F9/2→6H11/2 of Dy3+, respectively. The chromaticity coordinates and correlative color temperatures have been calculated and presented in the Commission International de I’Eclairage (CIE) diagrams. The results indicated that Gd1.9(MoO4)3:Dy0.13+ with CIE coordinates of (x=0.38, y=0.41) and the correlative color temperature of 4134 K is a potential candidate for white LEDs.

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

Potential red-emitting phosphor GdNbO_4:Eu^(3+),Bi^(3+) for near-UV white light emitting diodes

A red-emitting phosphor GdNbO4：Eu3＋,Bi3＋ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction （XRD）, particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4：Eu3＋,Bi3＋ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet （UV） light （394 nm） and emit the strong red light of 612 nm due to the Eu3＋ transition of SD0~TF2. The opti- mum content of Eu3＋ doped in the phosphor GdNbOn：Eu3＋ is 20mo1%. The phosphor Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ shows much stronger photoluminescence intensity and better chromaticity coordinates （x=0.642, 0.352） than GdNbO4：Eu3＋. It is confirmed that Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ is a potential candidate for near-UV chip-based white light emitting diodes.

Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

Near-infrared lead chalcogenide quantum dots:Synthesis and applications in light emitting diodes

This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.

Organic Light Emitting Diodes with Lithium Contained Alq3 as Electron Injection Layer

lNovel lithium doped tris 8 hydroxylquinoline aluminium(Alq3:Li) layer is deposited between emission layer and electron injection aluminium electrode as an electron injection assistant layer in different organic light emitting diodes(OLED) to lower the electron injection barrier. In these devices, Alq3 is used as emission layer, and a bilayer film of N,N bis (1 naphhyl) N,N diphenyl 1,1 biphenyle 4,4' diamine(NPB) and 4,4,4' tris(3 methyl phenylphenylamino) triphenylamine( m MTDATA) used as hole transport layer(HTL). The electroluminescent performance of devices with different thicknesses of Alq3∶Li shows that the insertion of the lithium doped Alq3 layer can reduce the turn on voltage by at least 2 volts, and the stability of devices with this lithium doped Alq3 layer is improved too. It can also change the efficiency of devices. Compared with an ultra thin lithium fluoride(LiF) layer, Alq3∶Li sheet gives similar effects but higher efficiency and can be much thicker and hence it is easier to control the deposition.

Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode

Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride （Mg：PTCDA） as electron injection layer and silver as cathode were demonstrated. As compared to Mg ： Ag cathode, the combination of the Mg ： PTCDA layer and silver provided enhanced electron injection into tris （8- quinolinolato） aluminium. The device with 1 ： 2 Mg ： PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg ： Ag cathode. The properties of Mg ： PTCDA composites were studied as well.

Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer

In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.

A recent advances of blue perovskite light emitting diodes for next generation displays

The halide perovskite blue light emitting diodes(PeLEDs)attracted many researchers because of its fascinating optoelectrical properties.This review introduces the recent progress of blue PeLEDs which focuses on emissive layers and interlayers.The emissive layer covers three types of perovskite structures:perovskite nanocrystals(PeNCs),2-dimensional(2D)and quasi-2D perovskites,and bulk(3D)perovskites.We will discuss about the remaining challenges of blue PeLEDs,such as limited performances,device instability issues,which should be solved for blue PeLEDs to realize next generation displays.

Organolead trihalide perovskite materials for efficient light emitting diodes

Organolead trihalide perovskite materials have been attracting increasing attention due to their promising role in solid solar cells. Several advantages make them potential candidates for optoelectronics:(1) solution- or/and vapor-processed preparation at low temperature;(2) tunable optical bandgap, wide absorption spectrum but narrow photoluminescence peaks;(3) long car-rier life time, large diffusion length and high charge mobility;(4) various nanostructures via tuning capping agents and sol-vents. In this review, we summarize recent attempts toward efficient LEDs based on organolead trihalide perovskite materials. The strategies of materials science, device design and interface engineering are highlighted. Recent development and future perspectives are summarized for practical perovskite light technologies.

Effect of light-emitting diodes with different color rendering indexes on the ocular tissues of rat

AIM:To compare the damage of light-emitting diodes(LEDs)with different color rendering indexes(CRIs)to the ocular surface and retina of rats.METHODS:Totally 20 Sprague-Dawley(SD)rats were randomly divided into four groups:the first group was normal control group without any intervention,other three groups were exposed by LEDs with low(LED-L),medium(LED-M),and high(LED-H)CRI respectively for 12 h a day,continuously for 4 wk.The changes in tear secretion(Schirmer I test,SIt),tear film break-up time(BUT),and corneal fluorescein sodium staining(CFS)scores were compared at different times(1 d before experiment,2 and 4 wk after the experiment).The histopathological changes of rat lacrimal gland and retina were observed at 4 wk,and the expressions of tumor necrosis factor-α(TNF-α)and interleukin-6(IL-6)in lacrimal gland were detected by immunofluorescence method.RESULTS:With the increase of light exposed time,the CFS value of each light exposed group continued to increase,and the BUT and SIt scores continued to decrease,which were different from the control group,and the differences between the light exposed groups were statistically significant.Hematoxylin-eosin(HE)results showed that the lacrimal glands of each exposed group were seen varying degrees of acinar atrophy,vacuoledistribution,increasing of eosinophil granules,etc.;the retina showed obvious reduction of photoreceptor cell layer and changes in retinal thickness;LED-L group has the most significant change in all tests.Immunofluorescence suggested that the positive expressions of TNF-αand IL-6 in the lacrimal glands of each exposed group were higher than those of the control group.CONCLUSION:LED exposure for 4 wk can cause the pathological changes of lacrimal gland and retina of rats,and increase the expression of TNF-αand IL-6 in lacrimal gland,the degree of damage is negatively correlated with the CRI.

Effects of light-emitting diodes on tissue culture plantlets and seedlings of rice (Oryza sativa L.)

Light-emitting diodes(L EDs)are a new light source with low energy consumption and high photoelectric conversion efficiency,and they can satisfy the energy-saving needs of plant culture systems.However,the effects of LED light sources on rice tissue culture and rice seedling cultivation are poorly understood.This study aimed to evaluate the effects of LEDs on the growth of tissue culture plantlets and seedlings of the rice(Oryza sativa L.)cultivar Nipponbare.The best light source for rice tissue culture was different from that for rice seedling cultivation.Blue(B)LED light was the most appropriate light for rice tissue culture.Under a B LED light,the time required for callus proliferation,differentiation and regeneration was the shortest,and the frequency of plantlet ititin,dfferetiation and regeneration was the highest.Ablue:red(B:R)=1:1LED light facilitated the growth of rice seedlings and produced the highest chlorophyll and carotenoid contents and photosynthetic rates in the rice seedlings.Abundant photosynthetic products were more effectively generated in the rice seedlings under the B:R=1:1 LED and R LED lights than under the B LED light.B LED light is the most appropriate light for rice tissue culture plantlets and can be used as an alternative light source for rice tissue culture,and B:R=1:1 LED light facilitated the cultivation of robust rice seedlings and can be used as the primary light source for rice factory seedling cultivation.

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.

Thermal Analysis of Organic Light Emitting Diodes Based on Basic Heat Transfer Theory

We investigate the thermal characteristics of standard organic light-emitting diodes （OLEDs） using a simple and clear 1D thermal model based on the basic heat transfer theory. The thermal model can accurately estimate the device temperature, which is linearly with electrical input power. The simulation results show that there is almost no temperature gradient within the OLED device working under steady state conditions. Furthermore, thermal analysis simulation results show that the surface properties （convective heat transfer coetficient and surface emissivity） of the substrate or cathode can significantly affect the temperature distribution of the OLED.

Efficiency analysis of a-SiC:H thin film light emitting diodes

The hole injection,the radiative recombination and the device luminescent efficiencies of amorphous silicon carbide thin film p-i-n junction light emitting diodes are quantitatively calculated,and the effect of the carrier(especially the hole) injection and recombination processes on the device luminescent characteristics are revealed.Without considering the device junction temperature,it is found that the device luminescent efficiency mainly depends on the hole injection efficiency at low field and the hole radiative recombination efficiency at high field respectively.The theoretical analyses are in well agreement with the experimental results.

Regulation of different light conditions for efficient biomass production and protein accumulation of Spirulina platensis

Light plays an important role in the photosynthesis and metabolic process of microalgae.However,how different light conditions regulate the biomass production and protein accumulation of microalgae is mostly unknown.In this study,the influence of different light conditions,including light colors,densities,and light:dark cycles on the cell growth and biochemical composition of Spirulina platensis was symmetrically characterized.Under different colored lights,S.platensis all shows an increase trend within the increased light intensity ranges;however,each showing different optimal light intensities.At the same light intensity,different colored lights show different growth rate of S.platensis following the sequence of red>white>green>yellow>blue.The maximum growth rate and protein accumulation were determined as 21.88 and 5.10 mg/(L·d)when illuminated under red LED.The energy efficiency of different light sources was calculated and ranked as red>white>blue≈green>yellow.Transcriptomic analysis suggests that red light can promote cell growth and protein accumulation by upregulating genes related to photosynthesis,carbon fixation,and C-N metabolism pathways.This study provides a conducive and efficient way to promote biomass production and protein accumulation of S.platensis by regulating light conditions.

Highly Efficient and Stable Hybrid White Organic Light Emitting Diodes with Controllable Exciton Behavior by a Mixed Bipolar Interlayer

Highly efficient and stable hybrid white organic light-emitting diodes （HWOLEDs） with a mixed bipolar interlayer between fluorescent blue and phosphorescent yellow emitting layers are demonstrated. The bipolar interlayer is a mixture of p-type diphenyl （l0-phenyl-lOH-spiro [acridine-9,9＇-fluoren]-3Lyl） phosphine oxide and n-type 2＇,2- （1,3,5-benzinetriyl）-tris（1-phenyl-l-H-benzimidazole）. The electroluminance and Commission Internationale de l＇Eclairage （CIE1931） coordinates＇ characteristics can be modulated easily by adjusting the ratio of the hole- predominated material to the electron-predominated material in the interlayer. The hybrid WOLED with a p-type：n-type ratio of 1：3 shows a maximum current efficiency and power efficiency of 61.1 ed/A and 55.8 lm/W, respectively, with warm white CIE coordinates of （0.34, 0.43）. The excellent efficiency and adaptive CIE coordi- nates are attributed to the mixed interlayer with improved charge carrier balance, optimized exciton distribution, and enhanced harvesting of singlet and triplet excitons.