Effects of Light-Emitting Diode (LED) Red and Blue Light on the Growth and Photosynthetic Characteristics of <i>Momordica charantia</i>L.

With andromonoecious Momordica charantia L. (bitter gourd) as material, three light qualities (50 μmol·m-2·s-1) including white LED light (WL), blue monochromatic light (B, 465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the stomatal conductance (GS) of leaves, significantly improved the net photosynthetic rate (Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (Pmax), apparent quantum efficiency (AQE) and light saturation point (LSP), and reduced the dark respiration rate (Rd) and light compensation point (LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that Momordica charantia is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.

不同光质配比的LED光源补光对水稻机插秧苗生长发育的影响

以甬优12和扬两优6号作为试验材料,育秧期间采用纯蓝LED光源、纯红LED光源及红蓝光质各50%配比光源补光,以自然光下育秧为对照,研究不同红蓝光质配比LED光源补光对水稻机插秧苗生长发育的影响。结果表明,不同光质配比的LED光源补光对水稻秧苗生长有显著影响。蓝光能够抑制幼苗株高,提高充实度和根冠比,在培育壮苗方面发挥重要作用。红光处理下的水稻幼苗茎和叶鞘显著伸长,秧苗生长进程加快。此外,参试2个品种经红蓝光处理后的幼苗叶龄显著提高。试验结果探明了使用LED补光处理对水稻幼苗形态的影响,为调控水稻工厂化育秧的光环境提供了科学依据。

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes

Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent luminescence and charge transport properties also make them promising for light emitting diodes (LEDs). To achieve high-efficiency perovskite LEDs (PeLEDs), extensive efforts have been carried out to enhance radiative recombination rates by confining the electrons and holes. In addition to enhancing radiative recombination rates, it is equally important to decrease the non-radiative recombination for improving the device performance. Passivation of the defects could be an efficient way for reducing the non-radiative recombination.

Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

In order to decrease the Schottky barrier height and sheet resistance between graphene （Gr） and the p-GaN layers in GaN-based light-emitting diodes （LEDs）, some transparent thin films with good conductivity and large work function are essential to insert into Gr and p-GaN layers. In this work, the ultra-thin films of four metals （silver （Ag）, golden （Au）, nickel （Ni）, platinum （Pt）） are explored to introduce as a bridge layer into Gr and p-GaN, respectively. The effect of a different combination of Gr/metal transparent conductive layers （TCLs） on the electrical, optical, and thermal characteristics of LED was investigated by the finite element methods. It is found that both the TCLs transmittance and the surface temperature of the LED chip reduces with the increase of the metal thickness, and the transmittance decreases to about 80% with the metal thickness increasing to 2 nm. The surface temperature distribution, operation voltage, and optical output power of the LED chips with different metal/Gr combination were calculated and analyzed. Based on the electrical, optical, and thermal performance of LEDs, it is found that 1.5-nm Ag or Ni or Pt, but 1-nm Au combined with 3 layered （L） Gr is the optimal Gr/metal hybrid transparent and current spreading electrode for ultra-violet （UV） or near-UV LEDs.

Effects of ultrasonic bonding parameters on reliability of flip chip GaN-based light emitting diode

This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.

基于无源均流的谐振式无桥型Boost LED驱动电源

传统Boost功率因数校正变换器的输出电压必须大于输入电压,在一定程度上限制了其在LED驱动电源中的应用。同时,传统LED驱动电源因输入端整流桥的存在而限制了自身效率的进一步提升。基于谐振式Boost功率因数校正变换器拓扑提出了一种无源均流型无桥Boost LED驱动电源,通过引入谐振式电容均流网络,实现了多路均流输出;通过整流桥的去除,进一步提升了系统的效率。最后,搭建了一台效率可达93.64%的140 W实验样机,验证了理论分析的正确性与可行性。

Structure and luminescence of Ca_2Si_5N_8:Eu^(2+) phosphor for warm white light-emitting diodes

We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone

Recently ozone is one of natural hazards which comes from cars, industry using ozone for sterilization of organic and inorganic materials and for water purification. So, ozone sensing becomes very important, and convenient and accurate ozone sensor is required. A new high sensitivity ozone sensing system using an deep ultra-violet light emitting diode (DUV-LED) operated at the wavelength of 280 nm has been successfully constructed. The fabrication of diode operated at 280 nm is much easier than that of DUV-LED operated at Hg lamp wavelength of 254 nm. The system is compact and possible to sense the ozone concentration less than 0.1 ppm with an accuracy of 0.5% easily with low power DUV-LED of around 200 micro Watts operated at 280 nm without any data processing circuit.

Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.

紫外发光二极管(UV-LED)技术对食品微生物灭活应用的研究进展

紫外辐照是一种非热杀菌技术,汞蒸气紫外灯是现阶段用于食品卫生处理的主要设备,但受某些因素影响,汞灯的生产使用将逐渐变少,被环保节能的紫外发光二极管(UV-LED)取代是一种不可避免的趋势。本文根据UV-LED发光原理和多波长耦合应用的特点,综述了对微生物灭活的机理、探究了影响灭活效果的因素(波长、紫外剂量和物料特性)、处理食品的灭菌效果以及对部分食品品质的影响,为UV-LED在食品领域的杀菌处理工艺和设备参数优化提供参考。

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes

The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice(SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the ptype regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5%and 37.9% in the output power and external quantum efficiency at 120 m A appear in the device with double superlattice structure.

Design of patterned sapphire substrates for GaN-based light-emitting diodes

A new method for patterned sapphire substrate （PSS） design is developed and proven to be reliable and cost-effective. As progress is made with LEDs＇ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs＇ light extraction efficiency （LEE）. Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Retinal damage after exposure to white light emitting diode lights at different intensities in Sprague-Dawley rats

Background:The usage of the light emitting diode(LED)has been increasingly applied in the illumination setting and electronic equipment.However,the effect of LED lights on the retina remains unclear.In this study,we observed and analyzed the impact of white LED lights at different intensities on the function and morphology of rat retinas.Methods:Thirty-six Sprague-Dawley rats weighing 150-180 g were randomly divided into six groups(n=6 in each group)including a normal control(NC)group,4 white LED groups at different light intensities(4,000,6,000,7,000,and 10,000 lux),and an ultraviolet B(UVB)lighting group(302 nm,1,000μw/cm2).After 24 hours of continuous illumination,full-field flash electroretinogram(FERG)and pathological examination were performed in each group.Results:As revealed by FERG,the impairment of retinal function gradually worsened with the increase of LED light intensity.In contrast,the UVB group had the most severe retinal function impairment.Particularly,the functional damage of rod cells and inner nuclear layer cells was the main FERG finding in each group.In the NC group,the retina had typical morphologies featured by well-defined structures,clearly visible border between the inner and outer segments,and neatly arranged inner and outer nuclear layer cells.After 24 hours of illumination,the inner and outer parts of the retina in the 4,000 lux group were still neatly arranged,along with a clear border;however,the inner and outer nuclear layers were randomly arranged,and some irregular nuclei and cells were lost.The damage of the internal and external retinal segments and the internal and external nuclear layers became more evident in the 6,000 lux group,7,000 lux group,and 10,000 lux group.The UVB group had a more obviously disordered arrangement of inner and outer nuclear layers and loss of cells.Conclusions:Continuous exposure to white LED light can cause structural and functional damage to rat retinas,and such damage is related to the intensity of illumination.Therefore,the risk of retinal damage should be considered during LED illumination,and proper LED illumination intensity may help to maintain eye health.

Evaluation and Enhanced Use of Light Emitting Diodes for Hydroponics

Hydroponic farming is a viable and economical farming method,which can produce safe and healthy greens and vegetables conveniently and at a relatively low cost.It is essential to provide supplemental lighting for crops grown in greenhouses to meet the daily light requirement,Daily Light Integral(DLI).The present paper investigates how effectively and efficiently LEDs can be used as a light source in hydroponics.It is important for a hydroponic grower to assess the requirement of photo synthetically active radiation(PAR)or the Photosynthetic Photon Flux Density(PPFD),in a greenhouse,and adjust the quality and quantity of supplemental lighting accordingly.A Quantum sensor(or PAR sensor)can measure PAR more accurately than a digital light meter,which measures the light intensity or illuminance in the SI unit Lux,but a PAR sensor is relatively expensive and normally not affordable by an ordinary farmer.Therefore,based on the present investigation and experimental results,a very simple way to convert light intensity measured with a Lux meter into PAR is proposed,using a simple conversion factor(41.75 according to the present work).This allows a small-scale hydroponic farmer to use a simple and inexpensive technique to assess the day to day DLI values of PAR in a greenhouse accurately using just an inexpensive light meter.The present paper also proposes a more efficient way of using LED light panels in a hydroponic system.By moving the LED light panels closer to the crop,LED light source can use a fewer number of LEDs to produce the same required daily light requirement and can increase the efficiency of the power usage to more than 80%.Specifically,the present work has determined that it is important to design more efficient vertically movable LED light panels with capabilities of switching individual LEDs on and off,for the use in greenhouses.This allows a user to control the number of LEDs that can be lit at a particular time,as required.By doing so it is possible to increase the efficiency of a LED lighting system by reducing its cost of the electricity usage.