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Self‑Generated Buried Submicrocavities for High‑Performance Near‑Infrared Perovskite Light‑Emitting Diode 被引量:1
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作者 Jiong Li Chenghao Duan +12 位作者 Qianpeng Zhang Chang Chen Qiaoyun Wen Minchao Qin Christopher C.S.Chan Shibing Zou Jianwu Wei Zuo Xiao Chuantian Zuo Xinhui Lu Kam Sing Wong Zhiyong Fan Keyou Yan 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第8期355-367,共13页
ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)t... ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)to trigger the Ostwald ripening for the downward recrystallization of perovskite,resulting in spontaneous formation of buried submicrocavities as light output coupler.The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2%for near-infrared light.Therefore,PeLED yields peak external quantum efficiency(EQE)increasing from 17.3%at current density of 114 mA cm^(−2)to 25.5%at current density of 109 mA cm^(−2)and a radiance increasing from 109 to 487 W sr^(−1)m^(−2)with low rolling-off.The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr^(−1)m^(−2).Besides,downward recrystallization process slightly reduces the trap density from 8.90×10^(15)to 7.27×10^(15)cm^(−3).This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs. 展开更多
关键词 Perovskite light-emitting diodes Downward recrystallization Buried submicrocavities light out-coupling efficiency Radiative recombination
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Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications
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作者 韩长峰 钱若曦 +1 位作者 向超宇 钱磊 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第12期1-13,共13页
Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light e... Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized. 展开更多
关键词 quantum dots light emitting diodes device engineering
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Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer
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作者 曹一伟 吕全江 +4 位作者 杨天鹏 米亭亭 王小文 刘伟 刘军林 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第5期690-696,共7页
We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an... We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments. 展开更多
关键词 deep ultraviolet light-emitting diode(DUV-LED) polarization-induced doping ALGAN light extraction efficiency
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Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters
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作者 Yeeu-Chang Lee Chieh Chen +2 位作者 Cheng-An J. Lin Cheng-Yi Huang Chia-Hui Lin 《Optics and Photonics Journal》 2023年第11期243-250,共8页
We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable ma... We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92. 展开更多
关键词 Gold Nanocluster White light Emitting diodes Color Rendering Index Color Temperature
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Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers 被引量:4
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作者 Baiquan Liu Miao Xu +6 位作者 Lei Wang Hong Tao Yueju Su Dongyu Gao Linfeng Lan Jianhua Zou Junbiao Peng 《Nano-Micro Letters》 SCIE EI CAS 2014年第4期335-339,共5页
A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,0... A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED. 展开更多
关键词 White light HYBRID Color rendering index Organic light-emitting diodes Double emitting nanolayers
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Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs) 被引量:3
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作者 陈依新 沈光地 +2 位作者 郭伟玲 徐晨 李建军 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期562-565,共4页
The reasons for low output power of AlGalnP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especiall... The reasons for low output power of AlGalnP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift. 展开更多
关键词 AlGaInP light emitting diodes internal quantum efficiency HEAT light power
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Synthesis and luminescent properties of polycrystalline Gd_2(MoO_4)_3:Dy^(3+) for white light-emitting diodes 被引量:4
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作者 薛艳娜 肖芬 +1 位作者 张勤远 姜中宏 《Journal of Rare Earths》 SCIE EI CAS CSCD 2009年第5期753-757,共5页
Polycrystalline Gd2(MoO4)3:Dy3+ phosphors have been synthesized by high temperature solid-state reaction method. The phosphors were characterized with X-ray diffractometer, thermogravimetric analysis and different sca... Polycrystalline Gd2(MoO4)3:Dy3+ phosphors have been synthesized by high temperature solid-state reaction method. The phosphors were characterized with X-ray diffractometer, thermogravimetric analysis and different scanning calorimeter, scanning electron microscopy, and photoluminescence spectrofluorimeter. Several peaks at 351, 389, 425, 452, and 472 nm appeared in photoluminescence excitation spectrum, which matched well with the emission of the ultraviolet (UV) and blue-light emitting diode (LED) chips. Upon excitation at 389 nm UV light, intense emissions centered at 484, 575 and 668 nm were attributed to the transitions of 4F9/2→6H15/2, 4F9/2→6H13/2 and 4F9/2→6H11/2 of Dy3+, respectively. The chromaticity coordinates and correlative color temperatures have been calculated and presented in the Commission International de I’Eclairage (CIE) diagrams. The results indicated that Gd1.9(MoO4)3:Dy0.13+ with CIE coordinates of (x=0.38, y=0.41) and the correlative color temperature of 4134 K is a potential candidate for white LEDs. 展开更多
关键词 LUMINESCENCE Gd2(MoO4)3:Dy3+ PHOSPHORS light emitting diode rare earths
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Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes 被引量:2
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作者 汪莱 杨迪 +1 位作者 郝智彪 罗毅 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期25-30,共6页
InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by me... InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy (MOVPE), which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes. 展开更多
关键词 INGAN quantum dot light emitting diode MOVPE
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Quantification of six bioactive compounds in Zhenqi Fuzheng preparation by high-performance liquid chromatography coupled with diode array detector and evaporative light scattering detector 被引量:4
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作者 Yi-Kai Shi Fang Cui +3 位作者 Fang-Di Hu Ying-Yan Bi Yu-Feng Ma Shi-Lan Feng 《Journal of Pharmaceutical Analysis》 SCIE CAS 2011年第1期20-25,共6页
A simple and accurate high-performance liquid chromatography(HPLC)coupled with diode array detector(DAD)and evaporative light scattering detector(ELSD)was established for the determination of six bioactive compo... A simple and accurate high-performance liquid chromatography(HPLC)coupled with diode array detector(DAD)and evaporative light scattering detector(ELSD)was established for the determination of six bioactive compounds in Zhenqi Fuzheng preparation(ZFP).The monitoring wavelengths were 254,275 and 328 nm.Under the optimum conditions,good separation was achieved,and the assay was fully validated in respect of precision,repeatability and accuracy.The proposed method was successfully applied to quantify the six ingredients in 31 batches of ZFP samples and evaluate the variation by hierarchical cluster analysis(HCA),which demonstrated significant variations on the content of these compounds in the samples from different manufacturers with different preparation procedures.The developed HPLC method can be used as a valid analytical method to evaluate the intrinsic quality of this preparation. 展开更多
关键词 high-performance liquid chromatography(HPLC) diode array detector(DAD) evaporative light scattering detector(ELSD) Zhenqi Fuzheng preparation quantification hierarchical cluster analysis
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Potential red-emitting phosphor GdNbO_4:Eu^(3+),Bi^(3+) for near-UV white light emitting diodes 被引量:2
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作者 Ding-fei Zhang An Tang +1 位作者 Liu Yang Zeng-tao Zhu 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2012年第11期1036-1039,共4页
A red-emitting phosphor GdNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction (XRD), particle size analyzer and fluorescence spect... A red-emitting phosphor GdNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction (XRD), particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4:Eu3+,Bi3+ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet (UV) light (394 nm) and emit the strong red light of 612 nm due to the Eu3+ transition of SD0~TF2. The opti- mum content of Eu3+ doped in the phosphor GdNbOn:Eu3+ is 20mo1%. The phosphor Gdo.80NbO4:0.20Eu3+,0.03Bi3+ shows much stronger photoluminescence intensity and better chromaticity coordinates (x=0.642, 0.352) than GdNbO4:Eu3+. It is confirmed that Gdo.80NbO4:0.20Eu3+,0.03Bi3+ is a potential candidate for near-UV chip-based white light emitting diodes. 展开更多
关键词 PHOSPHORS solid-state reactions gadolinium niobate light emitting diodes
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Near-infrared lead chalcogenide quantum dots:Synthesis and applications in light emitting diodes 被引量:2
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作者 刘皓宸 钟华英 +6 位作者 郑凡凯 谢阅 李德鹏 吴丹 周子明 孙小卫 王恺 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第12期1-13,共13页
This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It ... This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs. 展开更多
关键词 lead chalcogenide quantum dots NEAR-INFRARED light emitting diodes
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Organic Light Emitting Diodes with Lithium Contained Alq3 as Electron Injection Layer 被引量:2
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作者 Zugang Liu J.L.Pinto 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2002年第2期121-123,共3页
lNovel lithium doped tris 8 hydroxylquinoline aluminium(Alq3:Li) layer is deposited between emission layer and electron injection aluminium electrode as an electron injection assistant layer in different organic lig... lNovel lithium doped tris 8 hydroxylquinoline aluminium(Alq3:Li) layer is deposited between emission layer and electron injection aluminium electrode as an electron injection assistant layer in different organic light emitting diodes(OLED) to lower the electron injection barrier. In these devices, Alq3 is used as emission layer, and a bilayer film of N,N bis (1 naphhyl) N,N diphenyl 1,1 biphenyle 4,4' diamine(NPB) and 4,4,4' tris(3 methyl phenylphenylamino) triphenylamine( m MTDATA) used as hole transport layer(HTL). The electroluminescent performance of devices with different thicknesses of Alq3∶Li shows that the insertion of the lithium doped Alq3 layer can reduce the turn on voltage by at least 2 volts, and the stability of devices with this lithium doped Alq3 layer is improved too. It can also change the efficiency of devices. Compared with an ultra thin lithium fluoride(LiF) layer, Alq3∶Li sheet gives similar effects but higher efficiency and can be much thicker and hence it is easier to control the deposition. 展开更多
关键词 Organic light emitting diodes Lithium layer ALQ3 EI
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Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode 被引量:2
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作者 曹国华 秦大山 +3 位作者 关敏 曹峻松 曾一平 李晋闽 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第5期1911-1915,共5页
Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared ... Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg : Ag cathode, the combination of the Mg : PTCDA layer and silver provided enhanced electron injection into tris (8- quinolinolato) aluminium. The device with 1 : 2 Mg : PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg : Ag cathode. The properties of Mg : PTCDA composites were studied as well. 展开更多
关键词 organic light emitting diodes Mg:PTCDA electron injection
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Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure 被引量:6
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作者 Zongtao Li Kai Cao +3 位作者 Jiasheng Li Yong Tang Xinrui Ding Binhai Yu 《Opto-Electronic Advances》 SCIE 2021年第2期19-47,共29页
Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red... Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope. 展开更多
关键词 perovskite light emitting diodes perovskite film device structure blue LEDs
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Luminescence characteristics of Eu^(3+) activated borate phosphor for white light emitting diode 被引量:2
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作者 李盼来 杨志平 +1 位作者 王志军 郭庆林 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第5期1907-1910,共4页
In this paper, the Sr3Y2 (BO3)4 :Eu^3+ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red... In this paper, the Sr3Y2 (BO3)4 :Eu^3+ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613 nm corresponding to the electric dipole 5^Do-7^F2 transition of Eu^3+ under 365 nm excitation, this is because Eu^3+ substituted for Y^3+ occupied the non-centrosymmetric position in the crystal structure of Sr3Y2(BO3)4. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet (254 nm, 365 nm and 400 nm) and blue (470 nm) light. The effect of Eu^3+ concentration on the red emission of Sr3Y2(BO3)4 :Eu^3+ was measured, the result shows that the emission intensities increase with increasing Eu^3+ concentration, then decrease. The Commission Internationale del'Eclairage chromaticity (x, y) of Sr3Y2(BO3)4 :Eu^3+ phosphor is (0.640, 0.355) at 15 mol% Eu^3+. 展开更多
关键词 white light emitting diode Sr3Y2(BO3)4 :Eu^3+ luminescence characteristics
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A green-yellow emitting β-Sr_2SiO_4:Eu^(2+) phosphor for near ultraviolet chip white-light-emitting diode 被引量:20
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作者 孙晓园 张家骅 +2 位作者 张霞 骆永石 王笑军 《Journal of Rare Earths》 SCIE EI CAS CSCD 2008年第3期421-424,共4页
Sr2SiO4:xEu^2+ phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4:xEu^2+ phosphor manipulated by Eu^2+ concentration was studied. The phase transited from β to α... Sr2SiO4:xEu^2+ phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4:xEu^2+ phosphor manipulated by Eu^2+ concentration was studied. The phase transited from β to α' in Sr2SiO4:xEu^2+ phosphor with increasing europium concentration. The single β phase was formed as x≤005 and changed α' phase when x〉0.01. The emission spectrum of the β-Sr2SiO4:Eu^2+ phosphor consisted of a green-yellow broadband peaking at around 540 nm and a blue band at 470 nm under near ultraviolet excitation. The white LEDs by combining near ultraviolet chips with β-Sr2SiO4:Eu^2+ phosphors were fabricated. The luminous efficiency (15.7lm/W) was higher than α'-Sr2SiO4:Eu^2+ phosphor white LED. 展开更多
关键词 luminescence SILICATE light-emitting diode rare earths
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Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter 被引量:1
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作者 魏娜 郭坤平 +3 位作者 周朋超 于建宁 魏斌 张建华 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第7期727-731,共5页
We characterized the 6,12-bis{[N-(3,4-dimethylphenyl)-N-(2,4,5-trimethylphenyl)]amino} chrysene (BmPAC), which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent devi... We characterized the 6,12-bis{[N-(3,4-dimethylphenyl)-N-(2,4,5-trimethylphenyl)]amino} chrysene (BmPAC), which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent device exhibits good performance with an external quantum efficiency of 5.8% and current efficiency of 8.9 cd/A, respectively. Using BmPAC, we also demonstrate a hybrid phosphorescence/fluorescence white organic light-emitting device (WOLED) with high efficiency of 36.3 cd/A. In order to improve the relative intensity of blue light, we plus a blue light-emitting layer (BEML) in front of the orange light emitting layer (YEML) to take advantage of the excess singlet excitons. With the new emitting layer of BEML/YEML/BEML, we demonstrate the fluorescence/phosphorescence/fluorescence WOLED exhibits good performance with a current efficiency of 47 cd/A and an enhanced relative intensity of blue light. 展开更多
关键词 BmPAC high efficiency blue organic light emitting diodes white organic light-emitting diodes
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High color rendering index white organic light-emitting diode using levofloxacin as blue emitter 被引量:1
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作者 苗艳勤 高志翔 +5 位作者 张爱琴 李源浩 王华 贾虎生 刘旭光 Tsuboi Taiju 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第5期577-582,共6页
Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED conta... Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4'-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7- tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBE which are separated by a 20-nm-thick buffer layer of TPBi (2,2',2"-(benzene-1,3,5-triyl)-tri(1-phenyl-lH-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. 展开更多
关键词 LEVOFLOXACIN blue organic light emitting diodes white organic light-emitting diodes high color rendering index
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A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting 被引量:2
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作者 何逸涛 乔明 +3 位作者 李路 代刚 张波 李肇基 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第9期104-107,共4页
A lateral current regulator diode (CRD) with field plates is proposed and experimentally demonstrated. The proposed CFtD is based on the junction field-effect transistor (JFET) structure. A cathode field plate is ... A lateral current regulator diode (CRD) with field plates is proposed and experimentally demonstrated. The proposed CFtD is based on the junction field-effect transistor (JFET) structure. A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated I-V characteristics. An anode field plate is induced to achieve a high breakdown voltage VB of the CRD. The influence of the key device parameters on the I-V characteristics of the lateral CRD are discussed. Experimental results show that the proposed CRD presents good I-V characteristics with a high VB about 180 V and a low knee voltage (Vk) below 3 V. Furthermore, the proposed CRD has a negative temperature coefficient. The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting. 展开更多
关键词 CRD of is JFET A Lateral Regulator diode with Field Plates for light-Emitting-diode lighting LEDs with for
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PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes 被引量:2
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作者 Jingbi You 《Journal of Semiconductors》 EI CAS CSCD 2019年第4期I0002-I0003,共2页
Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent l... Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent luminescence and charge transport properties also make them promising for light emitting diodes (LEDs). To achieve high-efficiency perovskite LEDs (PeLEDs), extensive efforts have been carried out to enhance radiative recombination rates by confining the electrons and holes. In addition to enhancing radiative recombination rates, it is equally important to decrease the non-radiative recombination for improving the device performance. Passivation of the defects could be an efficient way for reducing the non-radiative recombination. 展开更多
关键词 Solution-processed metal HALIDE perovskites (MHPs) light emitting diodes (LEDs) non-radiative recombination
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