An algorithm for the computation of the unstructured real stability radius of high dimensional linearsystem is presented. Using the accurate formula of the real stability radius of 2-dimensional system linear systemch...An algorithm for the computation of the unstructured real stability radius of high dimensional linearsystem is presented. Using the accurate formula of the real stability radius of 2-dimensional system linear systemchecks the algorithm. The result shows that the algorithm is reliable and efficient. As applications, the unstructuredreal stability radii of 2-dimensional Chua's circuit and 3-dimensional piecewise-linear system are calculated, thedynamical orbits of the corresponding perturbed systems are simulated.展开更多
The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the...The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time;it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.展开更多
文摘An algorithm for the computation of the unstructured real stability radius of high dimensional linearsystem is presented. Using the accurate formula of the real stability radius of 2-dimensional system linear systemchecks the algorithm. The result shows that the algorithm is reliable and efficient. As applications, the unstructuredreal stability radii of 2-dimensional Chua's circuit and 3-dimensional piecewise-linear system are calculated, thedynamical orbits of the corresponding perturbed systems are simulated.
基金Project supported by the Natural Science Research Key Project of Universities of Anhui Province,China(Grant No.KJ2017A502)the Introduced Talent Project of Anhui Science and Technology University,China(Grant No.DQYJ201603)the Excellent Talents Supported Project of Colleges and Universities,China(Grant No.gxyq2018048)。
文摘The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time;it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.
