期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance 被引量:4
1
作者 Mo CHEN Xue REN +2 位作者 Hua-gan WU Quan XU Bo-cheng BAO 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2019年第12期1706-1716,共11页
A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity, this memristive system has a line equilibrium set(0, 0, 0, δ) lo... A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity, this memristive system has a line equilibrium set(0, 0, 0, δ) located along the coordinate of the inner state variable of the memristor, whose stability is periodically varied with a change of δ. Nonlinear and one-dimensional initial offset boosting behaviors, which are triggered by not only the initial condition of the memristor but also other two initial conditions, are numerically uncovered. Specifically, a wide variety of coexisting attractors with different positions and topological structures are revealed along the boosting route. Finally, circuit simulations are performed by Power SIMulation(PSIM) to confirm the unique dynamical features. 展开更多
关键词 Initial offset boosting Memristive system Memductance line equilibrium set
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部