In the electric field and layer-to-layer interaction energy, the law of split-level of high-level Stark effect of spherical nanometer system is explored as well as the frequency of spectrum, intensity and size effect ...In the electric field and layer-to-layer interaction energy, the law of split-level of high-level Stark effect of spherical nanometer system is explored as well as the frequency of spectrum, intensity and size effect of coefficient of spontaneous radiation. Taking three layers CdS/HgS spherical nanometer system as an example, the influence of the electric field and layer-to- layer interaction energy is explored on Stark effect and spectrum. The results show that in the Stark effect system, the energy level is split based on 1, 3, ..., （2n-1）, when it is in the electric field only, similar to the hydrogen atoms; and in the electric field and layer-to-layer interaction, it is split based on 1, 4, ~ -., n2; with the quantum transition, the frequency of the spectrum decreases with the increasing size of the system; apart from a few spectral lines, the intensity of most spectral lines will decreased as the size increases; while the coefficient of spontaneous radiation will increase with the increasing size; the electric field will cause the changes of spectrum frequency; its spectrum frequency shift is proportional to the square of the electric field intensity; apart from a few spectral lines, the frequency shift of spectral lines that is caused by the electric field and layer-to-layer interaction will decrease as the size increases; the interaction will make the level of electronic energy level lower slightly （the order of magnitude is between 10-7-10-9 eV）, the slightly increased spectrum intensity and the slightly increased value of coefficient of spontaneous radiation, but it will not influence the frequency of spectrum, intensity, and the trend that coefficient of spontaneous radiation changes with the size; when the size is smaller, the layer-to-layer interaction effect will be significant.展开更多
A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The ...A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.展开更多
文摘In the electric field and layer-to-layer interaction energy, the law of split-level of high-level Stark effect of spherical nanometer system is explored as well as the frequency of spectrum, intensity and size effect of coefficient of spontaneous radiation. Taking three layers CdS/HgS spherical nanometer system as an example, the influence of the electric field and layer-to- layer interaction energy is explored on Stark effect and spectrum. The results show that in the Stark effect system, the energy level is split based on 1, 3, ..., （2n-1）, when it is in the electric field only, similar to the hydrogen atoms; and in the electric field and layer-to-layer interaction, it is split based on 1, 4, ~ -., n2; with the quantum transition, the frequency of the spectrum decreases with the increasing size of the system; apart from a few spectral lines, the intensity of most spectral lines will decreased as the size increases; while the coefficient of spontaneous radiation will increase with the increasing size; the electric field will cause the changes of spectrum frequency; its spectrum frequency shift is proportional to the square of the electric field intensity; apart from a few spectral lines, the frequency shift of spectral lines that is caused by the electric field and layer-to-layer interaction will decrease as the size increases; the interaction will make the level of electronic energy level lower slightly （the order of magnitude is between 10-7-10-9 eV）, the slightly increased spectrum intensity and the slightly increased value of coefficient of spontaneous radiation, but it will not influence the frequency of spectrum, intensity, and the trend that coefficient of spontaneous radiation changes with the size; when the size is smaller, the layer-to-layer interaction effect will be significant.
基金supported by the National Natural Science Foundation of China(No.61473166)
文摘A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.
