The impact of process induced variation on the response of SOI Fin FET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When Fin FET biased at OFF state configuration（Vgs D0, Vds DV...The impact of process induced variation on the response of SOI Fin FET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When Fin FET biased at OFF state configuration（Vgs D0, Vds DVdd/ is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse（single event transient, SET） is consequently formed. The results reveal that with the presence of line-edge roughness（LER）, which is one of the major variation sources in nano-scale Fin FETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered： type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters,correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size.展开更多
Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits.Additionally,decreasing the dimensions of nanostructures increases the effect of lin...Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits.Additionally,decreasing the dimensions of nanostructures increases the effect of line-edge roughness on the performance of the nanostructures.Efficient methods for characterizing three-dimensional nanostructures are required for process control.Here,extreme-ultraviolet(EUV)scatterometry is exploited for the analysis of line-edge roughness from periodic nanostructures.In line with previous observations,differences are observed between line edge and line width roughness.The angular distribution of the diffuse scattering is an interplay of the line shape,the height of the structure,the roughness along the line,and the correlation between the lines.Unfortunately,existing theoretical methods for characterizing nanostructures using scatterometry do not cover all these aspects.Examples are shown here and the demands for future development of theoretical approaches for computing the angular distribution of the scattered X-rays are discussed.展开更多
文摘The impact of process induced variation on the response of SOI Fin FET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When Fin FET biased at OFF state configuration（Vgs D0, Vds DVdd/ is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse（single event transient, SET） is consequently formed. The results reveal that with the presence of line-edge roughness（LER）, which is one of the major variation sources in nano-scale Fin FETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered： type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters,correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size.
基金funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 826589|MADEin4This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and The Netherlands,France,Belgium,Germany,Czech Republic,Austria,Hungary,and IsraelOpen Access funding enabled and organized by Projekt DEAL.
文摘Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits.Additionally,decreasing the dimensions of nanostructures increases the effect of line-edge roughness on the performance of the nanostructures.Efficient methods for characterizing three-dimensional nanostructures are required for process control.Here,extreme-ultraviolet(EUV)scatterometry is exploited for the analysis of line-edge roughness from periodic nanostructures.In line with previous observations,differences are observed between line edge and line width roughness.The angular distribution of the diffuse scattering is an interplay of the line shape,the height of the structure,the roughness along the line,and the correlation between the lines.Unfortunately,existing theoretical methods for characterizing nanostructures using scatterometry do not cover all these aspects.Examples are shown here and the demands for future development of theoretical approaches for computing the angular distribution of the scattered X-rays are discussed.
