A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transf...A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.展开更多
The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly...The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector(D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor(PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 Me V·cm^2/mg, and one integral bin of LET>20 Me V·cm^2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 Me V·cm^2/mg, whereas that of the integral bin is determined to be LET>14.790 Me V·cm^2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases.展开更多
基金Supported by the Key Laboratory of Microsatellites,Chinese Academy of Sciences
文摘A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.
基金supported by the National Natural Science Foundation of China(Grant No.41374181)the National Key Scientific Instrument and Equipment Development ProjectsChina(Grant No.2012YQ03014207)
文摘The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector(D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor(PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 Me V·cm^2/mg, and one integral bin of LET>20 Me V·cm^2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 Me V·cm^2/mg, whereas that of the integral bin is determined to be LET>14.790 Me V·cm^2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases.
