A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control ...A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.展开更多
采用电压控制的伪电阻结构,设计了一款具有超低频下截止频率调节功能的带通可变增益放大器(VGA),由于该结构具有可调节超大的等效电阻和反馈电容使VGA的下截止频率可以调节。提出了一种改进的甲乙类运算跨导放大器(OTA)结构,采用新颖的...采用电压控制的伪电阻结构,设计了一款具有超低频下截止频率调节功能的带通可变增益放大器(VGA),由于该结构具有可调节超大的等效电阻和反馈电容使VGA的下截止频率可以调节。提出了一种改进的甲乙类运算跨导放大器(OTA)结构,采用新颖的浮动偏置设计,在满足高压摆率的条件下,有效提高共源共栅结构的电压输出范围。将伪电阻用于OTA的共模反馈,克服了阻性共模检测结构负载效应的问题。该VGA电路采用TSMC 0.18μm标准工艺设计和流片,测试结果表明,1.2 V电源电压下,其下截止频率调节范围为1.3~244 Hz,增益为49.2,44.2,39.2 d B,带宽为3.4,3.9,4.4 k Hz,消耗电流为3.9μA,共模抑制比达75.2 d B。展开更多
文摘A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.
文摘采用电压控制的伪电阻结构,设计了一款具有超低频下截止频率调节功能的带通可变增益放大器(VGA),由于该结构具有可调节超大的等效电阻和反馈电容使VGA的下截止频率可以调节。提出了一种改进的甲乙类运算跨导放大器(OTA)结构,采用新颖的浮动偏置设计,在满足高压摆率的条件下,有效提高共源共栅结构的电压输出范围。将伪电阻用于OTA的共模反馈,克服了阻性共模检测结构负载效应的问题。该VGA电路采用TSMC 0.18μm标准工艺设计和流片,测试结果表明,1.2 V电源电压下,其下截止频率调节范围为1.3~244 Hz,增益为49.2,44.2,39.2 d B,带宽为3.4,3.9,4.4 k Hz,消耗电流为3.9μA,共模抑制比达75.2 d B。