为寻求以低成本制备n型太阳电池的pn结,进行了Al-17.6wt%Si合金熔体中(001)n型单晶硅衬底上液相外延生长p型掺杂硅实验。所用方法为垂直浸渍法,实验了过冷恒温生长与回熔处理后连续冷却生长两种模式,过程中体系以流动高纯氩保护。对所...为寻求以低成本制备n型太阳电池的pn结,进行了Al-17.6wt%Si合金熔体中(001)n型单晶硅衬底上液相外延生长p型掺杂硅实验。所用方法为垂直浸渍法,实验了过冷恒温生长与回熔处理后连续冷却生长两种模式,过程中体系以流动高纯氩保护。对所得外延生长晶体结构、形貌及所得pn结开路电压进行了分析和测定。结果显示,合金熔体中硅晶体(001)液相外延生长能够实现,但一般呈离散分布的金字塔型岛状生长;只有衬底回熔处理后原位连续降温生长模式可获得连续外延薄膜,之后在其上出现岛状生长,呈现Stranski-Krastanov生长模式。所得连续外延薄膜形成的pn结开路电压比恒温生长所得的提升约100 m V;连续外延薄膜形成后期出现的岛状生长使开路电压明显下降;生长速度提高会使连续降温外延生长pn结开路电压略有降低。展开更多
The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented.This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, w...The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented.This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics.展开更多
文摘为寻求以低成本制备n型太阳电池的pn结,进行了Al-17.6wt%Si合金熔体中(001)n型单晶硅衬底上液相外延生长p型掺杂硅实验。所用方法为垂直浸渍法,实验了过冷恒温生长与回熔处理后连续冷却生长两种模式,过程中体系以流动高纯氩保护。对所得外延生长晶体结构、形貌及所得pn结开路电压进行了分析和测定。结果显示,合金熔体中硅晶体(001)液相外延生长能够实现,但一般呈离散分布的金字塔型岛状生长;只有衬底回熔处理后原位连续降温生长模式可获得连续外延薄膜,之后在其上出现岛状生长,呈现Stranski-Krastanov生长模式。所得连续外延薄膜形成的pn结开路电压比恒温生长所得的提升约100 m V;连续外延薄膜形成后期出现的岛状生长使开路电压明显下降;生长速度提高会使连续降温外延生长pn结开路电压略有降低。
基金Project supported by the German Research Foundation(DFG)(No.BO 1129/5-1)
文摘The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented.This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics.
