Thin Mn（2 nm）/Al（2 nm） bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic T-phase forms in the buffer layers at an optimum substrate temperature. As a tem...Thin Mn（2 nm）/Al（2 nm） bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic T-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60490290, 60678008, 10604016, 50771032,and 50771033)the National Basic Research Program of China (Grant No. 2009CB929201)
文摘Thin Mn（2 nm）/Al（2 nm） bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic T-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.
