In this paper, the method proposed recently by the author for the solution of probability density function (PDF) of nonlinear stochastic systems is presented in detail and extended for more general problems of stochas...In this paper, the method proposed recently by the author for the solution of probability density function (PDF) of nonlinear stochastic systems is presented in detail and extended for more general problems of stochastic differential equations (SDE), therefore the Fokker Planck Kolmogorov (FPK) equation is expressed in general form with no limitation on the degree of nonlinearity of the SDE, the type of δ correlated excitations, the existence of multiplicative excitations, and the dimension of SDE or FPK equation. Examples are given and numerical results are provided for comparing with known exact solution to show the effectiveness of the method.展开更多
This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical...This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].展开更多
We present the electronic structure and electron energy loss spectroscopy (EELS) for uranium, niobium and U3Nb in which uranium is substituted by niobium. Comparing the electronic structures and optical properties for...We present the electronic structure and electron energy loss spectroscopy (EELS) for uranium, niobium and U3Nb in which uranium is substituted by niobium. Comparing the electronic structures and optical properties for uranium, niobium and U3Nb, we found that when niobium atom replaces uranium atom in the center lattice, density of state (DOS) of U3Nb shifts downward to low energy. Niobium affects DOS for f and d electrons more than that for p and s electrons. U3Nb is similar to uranium for the electronic energy loss spectra.展开更多
使用多体摄动理论研究了碱土金属氧化物CaO的电子激发态和光吸收谱.运用GW近似方法来改进DFT对电子交换关联的处理,并计算了CaO电子能带结构.考虑到电子与空穴的相互作用,运用二粒子格林函数理论来求解Bethe-Salpeter方程,计算电子-空...使用多体摄动理论研究了碱土金属氧化物CaO的电子激发态和光吸收谱.运用GW近似方法来改进DFT对电子交换关联的处理,并计算了CaO电子能带结构.考虑到电子与空穴的相互作用,运用二粒子格林函数理论来求解Bethe-Salpeter方程,计算电子-空穴激发态,并在此基础上计算光吸收谱.计算结果 CaO能隙为7.0 e V,与实验结果 7.1 e V符合很好;并且CaO光吸收谱的理论结果与实验数据也相符合.展开更多
文摘In this paper, the method proposed recently by the author for the solution of probability density function (PDF) of nonlinear stochastic systems is presented in detail and extended for more general problems of stochastic differential equations (SDE), therefore the Fokker Planck Kolmogorov (FPK) equation is expressed in general form with no limitation on the degree of nonlinearity of the SDE, the type of δ correlated excitations, the existence of multiplicative excitations, and the dimension of SDE or FPK equation. Examples are given and numerical results are provided for comparing with known exact solution to show the effectiveness of the method.
文摘This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].
基金Supported by the National Key Laboratory Foundation of China (9140C6601010804)Sichuan Provincial Key Laboratory for Applied Nuclear Technology in Geology Foundation (27-7).
文摘We present the electronic structure and electron energy loss spectroscopy (EELS) for uranium, niobium and U3Nb in which uranium is substituted by niobium. Comparing the electronic structures and optical properties for uranium, niobium and U3Nb, we found that when niobium atom replaces uranium atom in the center lattice, density of state (DOS) of U3Nb shifts downward to low energy. Niobium affects DOS for f and d electrons more than that for p and s electrons. U3Nb is similar to uranium for the electronic energy loss spectra.
基金the National Natural Science Foundation of China，the Strategic Programs for Innovative Research，the Computational Materials Science Initiative，the Yukawa International Program for Quark-Hadron Sciences at YITP,Kyoto University
文摘电子结构和单斜晶的 ZrO <sub>2</sub> 的光性质(m-ZrO <sub>2</sub>) 借助于第一原则的本地密度近似(LDA ) 被调查 + U 途径。没有所在地的库仑相互作用， m-ZrO <sub>2</sub> 的乐队差距是 3.60 eV，比试验性的价值(5.8 eV ) 低得多。由在 Zr 原子上介绍 4d orbitals 的库仑相互作用(U <sup > d </sup>) 并且 O 原子上的 2p orbitals (U <sup > 我们能复制的 p </sup>), 乐队差距的试验性的价值。， m-ZrO <sub>2</sub> 的计算绝缘的功能在四角形的 ZrO <sub>2</sub> 和它是的立方的 ZrO <sub>2</sub> 在它的想象的部分在乐队差距的边展出一个小肩膀不在，它与试验性的观察一致。肩膀的起源在原子价和传导乐队的边附近被归因于电子结构的差别。
文摘使用多体摄动理论研究了碱土金属氧化物CaO的电子激发态和光吸收谱.运用GW近似方法来改进DFT对电子交换关联的处理,并计算了CaO电子能带结构.考虑到电子与空穴的相互作用,运用二粒子格林函数理论来求解Bethe-Salpeter方程,计算电子-空穴激发态,并在此基础上计算光吸收谱.计算结果 CaO能隙为7.0 e V,与实验结果 7.1 e V符合很好;并且CaO光吸收谱的理论结果与实验数据也相符合.
