Traditional digital processing approaches are based on semiconductor transistors, which suffer from high power consumption, aggravating with technology node scaling. To solve definitively this problem, a number of eme...Traditional digital processing approaches are based on semiconductor transistors, which suffer from high power consumption, aggravating with technology node scaling. To solve definitively this problem, a number of emerging non-volatile nanodevices are under intense investigations. Meanwhile, novel computing circuits are invented to dig the full potential of the nanodevices. The combination of non-volatile nanodevices with suitable computing paradigms have many merits compared with the complementary metal-oxide-semiconductor transistor （CMOS） technology based structures, such as zero standby power, ultra-high density, non-volatility, and acceptable access speed. In this paper, we overview and compare the computing paradigms based on the emerging nanodevices towards ultra-low dissipation.展开更多
The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,s...The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.展开更多
文摘Traditional digital processing approaches are based on semiconductor transistors, which suffer from high power consumption, aggravating with technology node scaling. To solve definitively this problem, a number of emerging non-volatile nanodevices are under intense investigations. Meanwhile, novel computing circuits are invented to dig the full potential of the nanodevices. The combination of non-volatile nanodevices with suitable computing paradigms have many merits compared with the complementary metal-oxide-semiconductor transistor （CMOS） technology based structures, such as zero standby power, ultra-high density, non-volatility, and acceptable access speed. In this paper, we overview and compare the computing paradigms based on the emerging nanodevices towards ultra-low dissipation.
基金supported in part by the National Natural Science Foundation of China(Nos.61421005,61376084)the National Science and Technology Major Project of China(No.2011ZX02708)
文摘The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
