Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.

Enhance Egocentric Grasp Recognition Based Flex Sensor Under Low Illumination

Egocentric recognition is exciting computer vision research by acquiring images and video from the first-person overview.However,an image becomes noisy and dark under low illumination conditions,making subsequent hand detection tasks difficult.Thus,image enhancement is necessary to make buried detail more visible.This article addresses the challenge of egocentric hand grasp recognition in low light conditions by utilizing the flex sensor and image enhancement algorithm based on adaptive gamma correction with weighting distribution.Initially,a flex sensor is installed to the thumb for object manipulation.The thumb placement that holds in a different position on the object of each grasp affects the voltage changing of the flex sensor circuit.The average voltages are used to configure the weighting parameter to improve images in the image enhancement stage.Moreover,the contrast and gamma function are used to adjust varies the low light condition.These grasp images are then separated to be training and testing with pretrained deep neural networks as the feature extractor in YOLOv2 detection network for the grasp recognition system.The proposed of using a flex sensor significantly improves the grasp recognition rate in low light conditions.

Energy Minimization for Heterogenous Traffic Coexistence with Puncturing in Mobile Edge Computing-Based Industrial Internet of Things

Puncturing has been recognized as a promising technology to cope with the coexistence problem of enhanced mobile broadband(eMBB) and ultra-reliable low latency communications(URLLC)traffic. However, the steady performance of eMBB traffic while meeting the requirements of URLLC traffic with puncturing is a major challenge in some realistic scenarios. In this paper, we pay attention to the timely and energy-efficient processing for eMBB traffic in the industrial Internet of Things(IIoT), where mobile edge computing(MEC) is employed for data processing. Specifically, the performance of eMBB traffic and URLLC traffic in a MEC-based IIoT system is ensured by setting the threshold of tolerable delay and outage probability, respectively. Furthermore,considering the limited energy supply, an energy minimization problem of eMBB device is formulated under the above constraints, by jointly optimizing the resource blocks(RBs) punctured by URLLC traffic, data offloading and transmit power of eMBB device. With Markov's inequality, the problem is reformulated by transforming the probabilistic outage constraint into a deterministic constraint. Meanwhile, an iterative energy minimization algorithm(IEMA) is proposed.Simulation results demonstrate that our algorithm has a significant reduction in the energy consumption for eMBB device and achieves a better overall effect compared to several benchmarks.

Low lighting image enhancement using local maximum color value prior

We study the problem of low lighting image en- hancement. Previous enhancement methods for images un- der low lighting conditions usually fail to consider the factor of image degradation during image formation. As a result, the lost contrast could not be recovered after enhancement. This paper will adaptively recover the contrast and adjust the exposure for low lighting images. Our first contribution is the modeling of image degradation in low lighting con- ditions. Then, the local maximum color value prior is pro- posed, i.e., in most regions of well exposed images, the lo- cal maximum color value of a pixel will be very high. By combining the image degradation model and local maximum color value prior, we propose to recover the un-degraded im- ages under low lighting conditions. Last, an adaptive expo- sure adjustment module is proposed to obtain the final result. We show that our approach enables better enhancement com- paring with popular image editing tools and academic algo- rithms.

Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions

The radiation effects on several properties （reference voltage, digital output logic voltage, and supply current） of dual 8-bit analog-to-digital （A/D） converters （AD9058） under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity （ELDRS） under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.

Investigation on the intensity noise characteristics of the semiconductor ring laser

Based on the frequency-domain multimode theoretical model, detailed investigations on the noise characteristic of the semiconductor ring laser （SRL） are first performed in this paper. The comprehensive nonlinear terms related to the third order nonlinear susceptibility Z3 are included in this model; the Langevin noise sources for electric field and carrier density fluctuations are also taken into account. As the injection current increases, the SRL may present several operation regimes. Remarkable and unusual low frequency noise enhancement in the form of a broad low frequency tail extending all the way to the relaxation oscillation peak is observed in any of the operation regimes of SRLs. The influences of the backscattering coefficient on the relative intensity noise （RIN） spectrum in typical operation regimes are investigated in detail.