The next generation oflogic gate devices are expected to depend upon radically new technologies mainly due to the increasing difficulties and limitations of existing CMOS technology. MOSFET like CNFETs should ideally ...The next generation oflogic gate devices are expected to depend upon radically new technologies mainly due to the increasing difficulties and limitations of existing CMOS technology. MOSFET like CNFETs should ideally be the best devices to work with for high-performance VLS1. This paper presents results of a comprehensive comparative study of MOSFET-like carbon nanotube field effect transistors （CNFETs） technology based logic gate library for high-speed, low-power operation than conventional bulk CMOS libraries. It focuses on comparing four promising logic families namely： complementary-CMOS （C-CMOS）, transmission gate （TG）, complementary pass logic （CPL） and Domino logic （DL） styles are presented. Based on these logic styles, the proposed library of static and dynamic NAND-NOR logic gates, XOR, multiplexer and full adder functions are implemented efficiently and carefully analyzed with a test bench to measure propagation delay and power dissipation as a function of supply voltage. This analysis provides the right choice of logic style for low-power, high-speed applications. Proposed logic gates libraries are simulated using Synopsys HSPICE based on the standard 32 nm CNFET model. The simulation results demonstrate that, it is best to use C-CMOS logic style gates that are implemented in CNFET technology which are superior in performance compared to other logic styles, because of their low average powerdelay-product （PDP）. The analysis also demonstrates how the optimum supply voltage varies with logic styles in ultra-low power systems. The robustness of the proposed logic gate library is also compared with conventional and state-art of CMOS logic gate libraries.展开更多
为解决里所(Reed-solomon,RS)编码的低功耗设计,从系统架构、RTL级、门级等不同设计层级进行分析,并在专用集成电路(Application specific integrated circuit,ASIC)设计中加以实践。基于低功耗设计将前端RTL级设计与后端IC设计结合起来...为解决里所(Reed-solomon,RS)编码的低功耗设计,从系统架构、RTL级、门级等不同设计层级进行分析,并在专用集成电路(Application specific integrated circuit,ASIC)设计中加以实践。基于低功耗设计将前端RTL级设计与后端IC设计结合起来,研究能实现RS编码功能的芯片。在系统架构层,针对RS编码算法中伽罗华域的乘法运算在硬件实现时存在数据运算量大、消耗功耗大等问题,提出基于乘法器因子矩阵的方法对RS编码算法进行优化,通过将乘法运算转化为减法运算等方式减少数据运算量,从而降低功耗。在RTL级和门级层面,分别在逻辑综合和后端实现中加以约束来实现低功耗设计,总体功耗可以降低60%左右。解决了因IC芯片功耗过高导致芯片性能下降,从而影响芯片正常工作等问题,为集成电路工艺提供了新的发展方向。展开更多
提出以电流信号表示逻辑值的新型低噪声触发器设计,用于高性能混合集成电路的设计中以减少存贮单元开关噪声对模拟电路性能的影响。所提出的设计包括主从型边沿触发器和单闩锁单边沿触发器。单个锁存器的电流型边沿触发器设计是通过在...提出以电流信号表示逻辑值的新型低噪声触发器设计,用于高性能混合集成电路的设计中以减少存贮单元开关噪声对模拟电路性能的影响。所提出的设计包括主从型边沿触发器和单闩锁单边沿触发器。单个锁存器的电流型边沿触发器设计是通过在有效时钟沿后产生的窄脉冲使锁存器瞬时导通完成一次取样求值。与主从型触发器相比,单闩锁结构的触发器具有结构简单、直流功耗低的特点。采用0.25μm CM O S工艺参数的HSP ICE模拟结果表明,所提出的电流型触发器工作时,在电源端产生的电流波动远远小于传统的CM O S电路。展开更多
文摘The next generation oflogic gate devices are expected to depend upon radically new technologies mainly due to the increasing difficulties and limitations of existing CMOS technology. MOSFET like CNFETs should ideally be the best devices to work with for high-performance VLS1. This paper presents results of a comprehensive comparative study of MOSFET-like carbon nanotube field effect transistors （CNFETs） technology based logic gate library for high-speed, low-power operation than conventional bulk CMOS libraries. It focuses on comparing four promising logic families namely： complementary-CMOS （C-CMOS）, transmission gate （TG）, complementary pass logic （CPL） and Domino logic （DL） styles are presented. Based on these logic styles, the proposed library of static and dynamic NAND-NOR logic gates, XOR, multiplexer and full adder functions are implemented efficiently and carefully analyzed with a test bench to measure propagation delay and power dissipation as a function of supply voltage. This analysis provides the right choice of logic style for low-power, high-speed applications. Proposed logic gates libraries are simulated using Synopsys HSPICE based on the standard 32 nm CNFET model. The simulation results demonstrate that, it is best to use C-CMOS logic style gates that are implemented in CNFET technology which are superior in performance compared to other logic styles, because of their low average powerdelay-product （PDP）. The analysis also demonstrates how the optimum supply voltage varies with logic styles in ultra-low power systems. The robustness of the proposed logic gate library is also compared with conventional and state-art of CMOS logic gate libraries.
文摘为解决里所(Reed-solomon,RS)编码的低功耗设计,从系统架构、RTL级、门级等不同设计层级进行分析,并在专用集成电路(Application specific integrated circuit,ASIC)设计中加以实践。基于低功耗设计将前端RTL级设计与后端IC设计结合起来,研究能实现RS编码功能的芯片。在系统架构层,针对RS编码算法中伽罗华域的乘法运算在硬件实现时存在数据运算量大、消耗功耗大等问题,提出基于乘法器因子矩阵的方法对RS编码算法进行优化,通过将乘法运算转化为减法运算等方式减少数据运算量,从而降低功耗。在RTL级和门级层面,分别在逻辑综合和后端实现中加以约束来实现低功耗设计,总体功耗可以降低60%左右。解决了因IC芯片功耗过高导致芯片性能下降,从而影响芯片正常工作等问题,为集成电路工艺提供了新的发展方向。
文摘提出以电流信号表示逻辑值的新型低噪声触发器设计,用于高性能混合集成电路的设计中以减少存贮单元开关噪声对模拟电路性能的影响。所提出的设计包括主从型边沿触发器和单闩锁单边沿触发器。单个锁存器的电流型边沿触发器设计是通过在有效时钟沿后产生的窄脉冲使锁存器瞬时导通完成一次取样求值。与主从型触发器相比,单闩锁结构的触发器具有结构简单、直流功耗低的特点。采用0.25μm CM O S工艺参数的HSP ICE模拟结果表明,所提出的电流型触发器工作时,在电源端产生的电流波动远远小于传统的CM O S电路。
