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Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance 被引量:5
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作者 王秀宇 张之圣 +1 位作者 白天 刘仲娥 《Transactions of Tianjin University》 EI CAS 2010年第5期348-353,共6页
High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than... High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty... 展开更多
关键词 thin film chip resistor high resistance low temperature coefficient of resistance alloy target magnetic sputtering Cr-Si-Ta-Al film
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Design of Bandgap Reference in Switching Power Supply 被引量:1
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作者 XU Li NIU Ping-juan FU Xian-song DING Ke PENG Xiao-lei 《Semiconductor Photonics and Technology》 CAS 2009年第2期101-104,129,共5页
A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit. Based on the analysis of conventio... A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit. Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward. In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process. The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50 ℃ to 150 ℃. The bandgap reference has the characteristics of low power and high PSRR. 展开更多
关键词 CMOS bandgap reference low temperature coefficient PSRR
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A sub-1 V high-precision CMOS bandgap voltage reference
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作者 Liao Jun Zhao Yiqiang Geng Junfeng 《Journal of Semiconductors》 EI CAS CSCD 2012年第2期138-142,共5页
A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to o... A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation.The circuit was designed and fabricated by SMIC 0.18μm CMOS technology.It produces an output reference of 713.6 mV.The temperature coefficient is 3.235 ppm/℃in the temperature range of-40 to 120℃,with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V.The average current consumption of the whole circuit is 49μA at the supply voltage of 1 V. 展开更多
关键词 bandgap reference curvature compensation low power supply low temperature coefficient
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