Ion beam epitaxy (IBE) technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion b...Ion beam epitaxy (IBE) technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.展开更多
On apparatus of magneto controllable sputter a multi layer film is experimentally formed on the surface of diamond by using low temperature plasma. After high temperature sintering the film can be transformed into qua...On apparatus of magneto controllable sputter a multi layer film is experimentally formed on the surface of diamond by using low temperature plasma. After high temperature sintering the film can be transformed into quasi gradient structure. Through experimental comparision, its high bond strength and anti oxidation is observed.展开更多
文摘Ion beam epitaxy (IBE) technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.
文摘On apparatus of magneto controllable sputter a multi layer film is experimentally formed on the surface of diamond by using low temperature plasma. After high temperature sintering the film can be transformed into quasi gradient structure. Through experimental comparision, its high bond strength and anti oxidation is observed.