External stimuli induced effective regulations of luminescent material are of significant interest in the development of smart optical devices.Here,by simply doping with Er^(3+) in the 0.94Bi_(0.5)Na_(0.5)TiO_(3)-0.06...External stimuli induced effective regulations of luminescent material are of significant interest in the development of smart optical devices.Here,by simply doping with Er^(3+) in the 0.94Bi_(0.5)Na_(0.5)TiO_(3)-0.06BaTiO_(3)(BNTBT)ferroelectric host,using the bendable mica substrate,and exerting mechanical strain(bending)or light illumination(via photochromic reaction),the all-inorganic,highly-transparent and flexible Er-doped BNTBT/Mica luminescent-ferroelectric thin films were designed and fabricated,displaying strain-induced dramatically elevation of up-conversion photoluminescence(PL)intensity,suppression of PL concentration quenching,outstanding endurance and durability,convenient illuminationmediated PL quenching.And the strain-induced structural changes and local lattice distortions of the thin films were further explored through theoretical calculations and Raman measurement.Our results can supply the guidance of designing other luminescent-ferroelectric materials with controlled PL properties via easy mechanical/photo stimuli for expanding the application of multifunctional wearable memory devices.展开更多
基金This work was supported by the National Natural Science Foundation of China(No.52072075,21973012)the Natural Science Foundation of Fujian Province(No.2018J01753 and 2019J01228).
文摘External stimuli induced effective regulations of luminescent material are of significant interest in the development of smart optical devices.Here,by simply doping with Er^(3+) in the 0.94Bi_(0.5)Na_(0.5)TiO_(3)-0.06BaTiO_(3)(BNTBT)ferroelectric host,using the bendable mica substrate,and exerting mechanical strain(bending)or light illumination(via photochromic reaction),the all-inorganic,highly-transparent and flexible Er-doped BNTBT/Mica luminescent-ferroelectric thin films were designed and fabricated,displaying strain-induced dramatically elevation of up-conversion photoluminescence(PL)intensity,suppression of PL concentration quenching,outstanding endurance and durability,convenient illuminationmediated PL quenching.And the strain-induced structural changes and local lattice distortions of the thin films were further explored through theoretical calculations and Raman measurement.Our results can supply the guidance of designing other luminescent-ferroelectric materials with controlled PL properties via easy mechanical/photo stimuli for expanding the application of multifunctional wearable memory devices.
