A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The exp...A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor （MAGFET） with an L ： W ratio of 2 ： 1 is 21.26 mV/T, and that with an L ： W ratio of 4 ： 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L ： W ratio of 4 ： 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.展开更多
A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on ...A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on （100） high resistivity silicon substrate by CMOS technology. When drain-source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 μm/160 μm, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.展开更多
基金Project supported by the National Natural Science Foundation of China (No.60676044)the Science and Technology Research Program of Heilongjiang Provincial Department of Education (No.11521215)
文摘A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor （MAGFET） with an L ： W ratio of 2 ： 1 is 21.26 mV/T, and that with an L ： W ratio of 4 ： 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L ： W ratio of 4 ： 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.
基金Project supported by the National Natural Science Foundation of China(No.61006057)the China Postdoctoral Science Foundation Funded Project(No.2013M530163)+1 种基金the Natural Science Foundation of Heilongjiang Province(No.F201433)the Modern Sensor Technology Innovation Team for College of Heilongjiang Province(No.2012TD007)
文摘A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on （100） high resistivity silicon substrate by CMOS technology. When drain-source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 μm/160 μm, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.
