Linear magnetoresistance and structural distortion in layered SrCu_(4-x)P_(2) single crystals

We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.

Negative magnetoresistance in the antiferromagnetic semimetal V_(1/3)TaS_(2)

Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at room temperature.However,how to obtain a large room-temperature negative MR effect in them remains to be studied.In this paper,by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side,we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment,but not in a static low magnetic field environment.Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory,we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field.This theoretical analytical model is further confirmed by regulating the geometry size of the device.Our work sheds light on the development of novel magnetic sensing,magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb

We report the study of magnetic and transport properties of polycrystalline and single crystal Na(Zn,Mn)Sb,a new member of“111”type of diluted magnetic materials.The material crystallizes into Cu2Sb-type structure which is isostructural to“111”type Fe-based superconductors.With suitable carrier and spin doping,the Na(Zn,Mn)Sb establishes spin-glass ordering with freezing temperature(Tf)below 15 K.Despite lack of long-range ferromagnetic ordering,Na(Zn,Mn)Sb single crystal still shows sizeable anomalous Hall effect below Tf.Carrier concentration determined by Hall effect measurements is over 1019 cm-3.More significantly,we observe colossal negative magnetoresistance(MR≡[ρ(H)−ρ(0)]/ρ(0))of-94%in the single crystal sample.

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures

We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.

Negative magnetoresistance in Dirac semimetal Cd_(3)As_(2)with in-plane magnetic field perpendicular to current

Topological insulators and semimetals have exotic surface and bulk states with massless Dirac or Weyl fermions,demonstrating microscopic transport phenomenon based on relativistic theory.Chiral anomaly induced negative magnetoresistance(negative MR)under parallel magnetic field and current has been used as a probable evidence ofWeyl fermions in recent years.Here we report a novel negative MR result with mutually perpendicular in-plane magnetic field and current in Cd_(3)As_(2)nanowires.The negative MR has a considerable value of-16%around 1.5 K and could persist to room temperature of 300 K with value of-1%.The gate tuning and angle dependence of the negative MR demonstrate the mechanism of the observed negative MR is different from the chiral anomaly.Percolating current paths induced by charge puddles and disorder might be involved to produce such considerable negative MR.Our results indicate the negative MR effect in topological semimetals involves synergistic effects of many mechanisms besides chiral anomaly.

Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor

Several critical clinical applications of magnetocardiography(MCG)involve its T wave.The T wave’s accuracy directly affects the diagnostic accuracy of MCG for ischemic heart disease and arrhythmogenic.Tunnel magnetoresistance(TMR)attracts attention as a new MCG measurement technique.However,the T waves measured by TMR are often drowned in noise.The accuracy of T waves needs to be discussed to determine the clinical value of MCG measured by TMR.This study uses an improved empirical mode decomposition(EMD)algorithm and averaging to eliminate the noise in the MCG measured by TMR.The MCG signals measured by TMR are compared with MCG measured by the optically pumped magnetometer(OPM)to judge its accuracy.Using the MCG measured by OPM as a reference,the relative errors in time and amplitude of the T wave measured by TMR are 3.4%and 1.8%,respectively.This is the first demonstration that TMR can accurately measure the time and amplitude of MCG T waves.The ability to provide reliable T wave data illustrates the significant clinical application value of TMR in MCG measurement.

Electric modulation of anisotropic magnetoresistance in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions

Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption.In solid-state dielectrics,an electric field drives the redistribution of ions to create onedimensional magnetic conductive nanostructures,enabling the realization of intriguing magnetoresistance(MR)effects.Here,we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions for MR modulation.By adjusting the voltage polarity and amplitude,the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed.This results in the reduction of device resistance by~10^(3)folds,and leads to an intriguing partial asymmetric MR effect.We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle,which can be used for magnetic field direction detection.Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

Abnormal magnetoresistance effect in the Nb/Si superconductor–semiconductor heterojunction

Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor–semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching.An abnormal magnetoresistance effect,which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface,has been distinctly observed when the Nb film is in the superconductiing state.By considering the heterojunction interface being equivalent to the structure of superconductor–barrier layer–superconductor configuration,we could generally understand this unusual effect based on the Andreev reflection mechanism.Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.

Spin Hall Magnetoresistance in Pt/BiFeO_(3)Bilayer

Multiferroic materials are general antiferromagnets with negligibly small net magnetization,which strongly limits their magnetoelectric applications in spintronics.Spin Hall magnetoresistance(SMR)is sensitive to the orientation of the Néel vector,which can be applied for the detection of antiferromagnetic states.Here,we apply SMR on the unique room-temperature antiferromagnetic multiferroic material BiFeO_(3)(BFO).The angular dependence of SMR in a bilayer of epitaxial BFO(001)and heavy metal Pt is studied.By rotating the sample under a magnetic field of 80 kOe in the film plane,the resistance shows the maximum when the field is perpendicular to the current while it shows the minimum when the field is along the current.This can be well explained by the SMR in the bilayer of heavy metal/antiferromagnet with the relative orientation between the Néel vector and current direction.In contrast,the angular dependence of the resistance of Pt directly deposited on a SrTiO_(3)(001)substrate shows a 90°shift with the magnetic field rotating in the film plane,which originates from the Hanle magnetoresistance of Pt.The obtained spin mixing conductance at the Pt/BFO interface clearly confirms the efficient spin transmission.Our results provide a possible solution for applications of antiferromagnetic multiferroic materials in spintronics.

High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.

STRUCTURE, MAGNETISM AND MAGNETORESISTANCE OF ANNEALED Co/Cu DISCONTINUOUS MULTILAYERS

Co/Cu discontinuons multilayers were prepared by rf-sputtering method under high sputtering power and then annealed at various temperutures in a high vacuum. The structural, magnetic and transport properties were strongly influenced by the annealing temperature. The annealed samples obviously became discontinuous multilayers.A maximum magnetoresistance ratio of 5.6% was obtained under a relatively low saturation field of about 400 (103/4π)A/m at the optimum annealing temperature of 450℃. When the annealing temperature was increased, the resistivity decreased, and the coercive force and the saturation field increased. The magnetoresistance ratio also depended on the thickness of Co and Cu layers. The magnetic and transport properties were explained on the basis of the discontinuous multilayered structure.

Hybrid Reduced Graphene Oxide with Special Magnetoresistance for Wireless Magnetic Field Sensor

Very few materials show large magnetoresistance(MR)under a low magnetic field at room temperature,which causes the barrier to the development of magnetic field sensors for detecting low-level electromagnetic radiation in real-time.Here,a hybrid reduced graphene oxide(rGO)-based magnetic field sensor is produced by in situ deposition of FeCo nanoparticles(NPs)on reduced graphene oxide(rGO).Special quantum magnetoresistance(MR)of the hybrid rGO is observed,which unveils that Abrikosov's quantum model for layered materials can occur in hybrid rGO;meanwhile,the MR value can be tunable by adjusting the particle density of FeCo NPs on rGO nanosheets.Very high MR value up to 21.02±5.74%at 10 kOe at room temperature is achieved,and the average increasing rate of resistance per kOe is up to 0.9282ΩkOe^-1.In this paper,we demonstrate that the hybrid rGO-based magnetic field sensor can be embedded in a wireless system for real-time detection of low-level electromagnetic radiation caused by a working mobile phone.We believe that the two-dimensional nanomaterials with controllable MR can be integrated with a wireless system for the future connected society.

Study of giant magnetoresistance and giant electroresistance of carbon based thin film

Using pulsed laser deposition, Fex-C1-x films on Si (100) substrates were prepared. At T=300 K and B=5 T a large positive MR of 138% was found in Fe0.011-C0.989 film. It is also found that when T<258 K, the MR of Fe0.011-C0.989 film is negative and when 258 K<T<340 K, the MR of the film is positive. The MR of the material is also found to be controlled by the measuring current and measuring voltage. When B=2000 Oe, the MR is 11.5% at 2.5 mA and is 35% at about 35 V. The material has also a giant electroresistance of 500% at 8 V.

Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors

Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative magnetoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga_(1–x)Mn_(x)As.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga_(1-x)Mn_(x)As_(1-y)P_(y) which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field.

Anisotropic Magnetoresistance Effect in Amorphous and Nanocrystalline Fe(Cu,Nb)-Si-B Alloys

The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu. Nb)-Si-B ribbons have been investigated. It was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.

Large linear magnetoresistance in a new Dirac material BaMnBi_2

Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles.Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials.In this paper,we report the synthesis of high quality single crystals of BaMnBi_2 and investigate the transport properties of the samples.BaMnBi_2 is a metal with an antiferromagnetic transition at T_N = 288 K.The temperature dependence of magnetization displays different behavior from CaMnBi_2 and SrMnBi_2,which suggests the possible different magnetic structure of BaMnBi_2.The Hall data reveals electron-type carriers and a mobility μ(5K)= 1500 cm^2/V·s.Angle-dependent magnetoresistance reveals the quasi-two-dimensional(2D) Fermi surface in BaMnBi_2- A crossover from semiclassical MR^H^2dependence in low field to MR^H dependence in high field,which is attributed to the quantum limit of Dirac fermions,has been observed in magnetoresistance.Our results indicate the existence of Dirac fermions in BaMnBi_2.

Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large,linear and unsaturated room temperature magnetoresistance.However,the magnetoresistance of graphene foam is not as large as that of monolayer graphene.Herein,we describe how magnetoresistance^100%was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene;the highest magnetoresistance of^158%was detected at 5 K under a magnetic field of 5 T.Unlike monolayer graphene,graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

Negative Longitudinal Magnetoresistance in the (8-Axis Resistivity of Cd

We report a systematic study on magnetotransport properties of the single crystal of cadmium(Cd). When the applied magnetic field B is perpendicular to the current I, the resistivities for both directions(I ‖ a, I ‖ c) show field induced metal-to-insulator-like transitions. The isothermal magnetoresistance(MR) at low temperatures increases approximately as the square of the magnetic field without any sign of saturation, and reaches up to 1140000% and 58000% at T = 2 K and B = 9 T for I ‖ a and I ‖ c, respectively. As the magnetic field rotates to parallel to the current, no sign of negative MR is observed for I ‖ a, while an obvious negative MR appears up to-70% at 2 K and 9 T for the current flowing along the c-axis, and the negative longitudinal MR shows a strong dependence of the electrode position on the single crystal. These results suggest that the negative longitudinal MR is caused by the dislocations formed in the process of crystal growing along the c-axis. Further studies are needed to clarify this point.