Ti3SiC2-reintbrced Ag-maJxix composites are expected to serve as eleclrical contacts. In this study, the wettability of Ag on a Ti3SiC2 subslxate was measured by the sessile drop melkod. The Ag-Ti3SiC2 composites were...Ti3SiC2-reintbrced Ag-maJxix composites are expected to serve as eleclrical contacts. In this study, the wettability of Ag on a Ti3SiC2 subslxate was measured by the sessile drop melkod. The Ag-Ti3SiC2 composites were prepared from Ag mad Ti3SiC2 powder mix- tures by pressureless sintering. The effects of compacting pressure （100-800 MPa）, sintering temperature （850-950~C）, mad soaking time （0.5-2 h） on the microslxucture mad properties of the Ag-Ti3SiC2 composites were investigated. The experimental results indicated that Ti3SiC2 paxticulates were uniformly distxibuted in flae Ag matrix, wiflaout reactions at the interthces between flae two phases. The prepared Ag-10wt%Ti3SiC2 had a relative density of 95% mad an electrical resistivity of 2.76 x 10 3 m~）＇cm when compacted at 800 MPa mad sintered at 950~C for 1 h. The incorporation of Ti3SiC2 into Ag was found to improve its hardness without substantially compromising its electrical conductivity; INs behavior was attxibuted to the combination of ceramic and metallic properties of the Ti3SiC2 reinforcement, suggesting its potential application in electrical contacts.展开更多
The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti3SiC2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, an...The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti3SiC2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy.The helium irradiation experiments were performed at both room temperature(RT) and 500℃ with a fluence up to 2.0 × 1017 He+/cm2 that resulted in a maximum damage of 9.6 displacements per atom.Our results demonstrate that He irradiations produce a large number of nanometer defects in Ti3SiC2 lattice and then cause the dissociation of Ti3SiC2 to TiC nano-grains with the increasing He fluence.Irradiation induced cell volume swelling of Ti3SiC2 at RT is slightly higher than that at 500℃, suggesting that Ti3SiC2 is more suitable for use in a high temperature environment.The temperature dependence of cell parameter evolution and the aggregation of He bubbles in Ti3SiC2 are different from those in Ti3AlC2.The formation of defects and He bubbles at the projected depth would induce the degradation of mechanical performance.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.51731004,51671054,and 51501038)“the Fundamental Research Funds for the Central Universities”in China
文摘Ti3SiC2-reintbrced Ag-maJxix composites are expected to serve as eleclrical contacts. In this study, the wettability of Ag on a Ti3SiC2 subslxate was measured by the sessile drop melkod. The Ag-Ti3SiC2 composites were prepared from Ag mad Ti3SiC2 powder mix- tures by pressureless sintering. The effects of compacting pressure （100-800 MPa）, sintering temperature （850-950~C）, mad soaking time （0.5-2 h） on the microslxucture mad properties of the Ag-Ti3SiC2 composites were investigated. The experimental results indicated that Ti3SiC2 paxticulates were uniformly distxibuted in flae Ag matrix, wiflaout reactions at the interthces between flae two phases. The prepared Ag-10wt%Ti3SiC2 had a relative density of 95% mad an electrical resistivity of 2.76 x 10 3 m~）＇cm when compacted at 800 MPa mad sintered at 950~C for 1 h. The incorporation of Ti3SiC2 into Ag was found to improve its hardness without substantially compromising its electrical conductivity; INs behavior was attxibuted to the combination of ceramic and metallic properties of the Ti3SiC2 reinforcement, suggesting its potential application in electrical contacts.
基金Project supported by the President Foundation of the China Academy of Engineering Physics(Grant No.YZJJLX2018003)the National Natural Science Foundation of China(Grant No.21601168)
文摘The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti3SiC2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy.The helium irradiation experiments were performed at both room temperature(RT) and 500℃ with a fluence up to 2.0 × 1017 He+/cm2 that resulted in a maximum damage of 9.6 displacements per atom.Our results demonstrate that He irradiations produce a large number of nanometer defects in Ti3SiC2 lattice and then cause the dissociation of Ti3SiC2 to TiC nano-grains with the increasing He fluence.Irradiation induced cell volume swelling of Ti3SiC2 at RT is slightly higher than that at 500℃, suggesting that Ti3SiC2 is more suitable for use in a high temperature environment.The temperature dependence of cell parameter evolution and the aggregation of He bubbles in Ti3SiC2 are different from those in Ti3AlC2.The formation of defects and He bubbles at the projected depth would induce the degradation of mechanical performance.
