A two-dimensional(2D)MA_(2)Z_(4)family with and phases has been attracting tremendous interest,the MoSi_(2)N_(4)and WSi_(2)N_(4)of which have been successfully fabricated(Science 369,670(2020)).Janus monolayers have b...A two-dimensional(2D)MA_(2)Z_(4)family with and phases has been attracting tremendous interest,the MoSi_(2)N_(4)and WSi_(2)N_(4)of which have been successfully fabricated(Science 369,670(2020)).Janus monolayers have been achieved in many 2D families,so it is interesting to construct a Janus monolayer from the MA_(2)Z_(4)family.In this work,Janus MSiGeN4(M=Zr and Hf)monolayers are predicted from-MA_(2)Z_(4),which exhibit dynamic,mechanical and thermal stabilities.It is found that they are indirect band-gap semiconductors by using generalized gradient approximation(GGA)plus spin-orbit coupling(SOC).With biaxial strain a/a0 from 0.90 to 1.10,the energy band gap shows a nonmonotonic behavior due to a change of conduction band minimum(CBM).A semiconductor to metal transition can be induced by both compressive and tensile strains,and the phase trans-formation point is about 0.96 for compressive strain and 1.10 for tensile strain.The tensile strain can change the positions of CBM and valence band maximum(VBM),and can also induce the weak Rashba-type spin splitting near CBM.For MSiGeN4(M=Zr and Hf)monolayers,both an in-plane and out-of-plane piezoelectric response can be produced,when a uniaxial strain in the basal plane is applied,which reveals the potential as piezoelectric 2D materials.The high absorption coefficients in the visible light region suggest that MSiGeN4(M=Zr and Hf)monolayers have potential photocatalytic applications.Our works provide an idea to achieve a Janus structure from the MA_(2)Z_(4)family,and can hopefully inspire further research exploring Janus MA_(2)Z_(4)monolayers.展开更多
The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted dr...The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.展开更多
基金supported by Natural Science Basis Research Plan in Shaanxi Province of China(2021JM-456)。
文摘A two-dimensional(2D)MA_(2)Z_(4)family with and phases has been attracting tremendous interest,the MoSi_(2)N_(4)and WSi_(2)N_(4)of which have been successfully fabricated(Science 369,670(2020)).Janus monolayers have been achieved in many 2D families,so it is interesting to construct a Janus monolayer from the MA_(2)Z_(4)family.In this work,Janus MSiGeN4(M=Zr and Hf)monolayers are predicted from-MA_(2)Z_(4),which exhibit dynamic,mechanical and thermal stabilities.It is found that they are indirect band-gap semiconductors by using generalized gradient approximation(GGA)plus spin-orbit coupling(SOC).With biaxial strain a/a0 from 0.90 to 1.10,the energy band gap shows a nonmonotonic behavior due to a change of conduction band minimum(CBM).A semiconductor to metal transition can be induced by both compressive and tensile strains,and the phase trans-formation point is about 0.96 for compressive strain and 1.10 for tensile strain.The tensile strain can change the positions of CBM and valence band maximum(VBM),and can also induce the weak Rashba-type spin splitting near CBM.For MSiGeN4(M=Zr and Hf)monolayers,both an in-plane and out-of-plane piezoelectric response can be produced,when a uniaxial strain in the basal plane is applied,which reveals the potential as piezoelectric 2D materials.The high absorption coefficients in the visible light region suggest that MSiGeN4(M=Zr and Hf)monolayers have potential photocatalytic applications.Our works provide an idea to achieve a Janus structure from the MA_(2)Z_(4)family,and can hopefully inspire further research exploring Janus MA_(2)Z_(4)monolayers.
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences
文摘The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.
