Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and th...Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and the deviation in cutoff wavelength is within 0. 1μm at 80K. A variety of surface defects are observed and the formation mechanism is discussed. The average density of surface defects in 75mm HgCdTe epiluyers is found to be less than 300cm^-2. It is found that the surface sticking coefficient of As during HgCdTe growth is very low and is sensitive to growth temperature, being only -1 × 10^-4 at 170℃. The activation energy of As in HgCdTe was determined to be 19.5meV,which decreases as （Na - Nd）^1/3 with a slope of 3.1 × 10^-5 meV · cm. The diffusion coefficients of As in HgCdTe of 1.0 ± 0,9 × 10^-16,8 ± 3 × 10^- is, and 1.5 ± 0.9 × 10^-13 cm^2/s are obtained at temperatures of 240,380, and 440℃, respectively under Hg-saturated pressure. The MBE-grown HgCdTe is incorporated into FPA fabrications,and the preliminary results are presented.展开更多
HgCdTe多层异质结技术是未来主流红外探测器发展的重要技术方向,在高工作温度、双/多色和雪崩光电管等高性能红外探测器中扮演着重要的角色。近年来基于多层异质结构的Hg Cd Te高工作温度红外探测器得到了快速发展,尤其是以势垒阻挡型...HgCdTe多层异质结技术是未来主流红外探测器发展的重要技术方向,在高工作温度、双/多色和雪崩光电管等高性能红外探测器中扮演着重要的角色。近年来基于多层异质结构的Hg Cd Te高工作温度红外探测器得到了快速发展,尤其是以势垒阻挡型和非平衡工作P~+-π(ν)-N~+结构为主的器件受到了广泛的研究。本文系统介绍了势垒阻挡型和非平衡工作P~+-π(ν)-N~+结构HgCdTe红外探测器的暗电流抑制机理,分析了制约两种器件结构发展的关键问题,并对国内外的研究进展进行了综述。对多层异质结构Hg CdTe红外探测器的发展进行了总结与展望。展开更多
利用自行研制的垂直开管富汞热处理设备,研究了碲镉汞(HgCdTe)富汞热处理技术。经富汞条件下300℃热处理和后续的常规N型热处理,As掺杂的Hg1-xCdxTe分子束外延材料中的As原子已被激活成P型受主,As原子激活率同石英管封管热处理试验的结...利用自行研制的垂直开管富汞热处理设备,研究了碲镉汞(HgCdTe)富汞热处理技术。经富汞条件下300℃热处理和后续的常规N型热处理,As掺杂的Hg1-xCdxTe分子束外延材料中的As原子已被激活成P型受主,As原子激活率同石英管封管热处理试验的结果基本一致。对包括3 in Si基衬底在内的材料退火前后表面形貌进行的比较显示,样品表面形貌可得到很好的保护。研究结果表明,碲镉汞开管富汞热处理技术可用于第三代碲镉汞红外焦平面技术所需大面积多层掺杂异质外延材料的制备。展开更多
文摘Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and the deviation in cutoff wavelength is within 0. 1μm at 80K. A variety of surface defects are observed and the formation mechanism is discussed. The average density of surface defects in 75mm HgCdTe epiluyers is found to be less than 300cm^-2. It is found that the surface sticking coefficient of As during HgCdTe growth is very low and is sensitive to growth temperature, being only -1 × 10^-4 at 170℃. The activation energy of As in HgCdTe was determined to be 19.5meV,which decreases as （Na - Nd）^1/3 with a slope of 3.1 × 10^-5 meV · cm. The diffusion coefficients of As in HgCdTe of 1.0 ± 0,9 × 10^-16,8 ± 3 × 10^- is, and 1.5 ± 0.9 × 10^-13 cm^2/s are obtained at temperatures of 240,380, and 440℃, respectively under Hg-saturated pressure. The MBE-grown HgCdTe is incorporated into FPA fabrications,and the preliminary results are presented.
文摘HgCdTe多层异质结技术是未来主流红外探测器发展的重要技术方向,在高工作温度、双/多色和雪崩光电管等高性能红外探测器中扮演着重要的角色。近年来基于多层异质结构的Hg Cd Te高工作温度红外探测器得到了快速发展,尤其是以势垒阻挡型和非平衡工作P~+-π(ν)-N~+结构为主的器件受到了广泛的研究。本文系统介绍了势垒阻挡型和非平衡工作P~+-π(ν)-N~+结构HgCdTe红外探测器的暗电流抑制机理,分析了制约两种器件结构发展的关键问题,并对国内外的研究进展进行了综述。对多层异质结构Hg CdTe红外探测器的发展进行了总结与展望。
文摘利用自行研制的垂直开管富汞热处理设备,研究了碲镉汞(HgCdTe)富汞热处理技术。经富汞条件下300℃热处理和后续的常规N型热处理,As掺杂的Hg1-xCdxTe分子束外延材料中的As原子已被激活成P型受主,As原子激活率同石英管封管热处理试验的结果基本一致。对包括3 in Si基衬底在内的材料退火前后表面形貌进行的比较显示,样品表面形貌可得到很好的保护。研究结果表明,碲镉汞开管富汞热处理技术可用于第三代碲镉汞红外焦平面技术所需大面积多层掺杂异质外延材料的制备。
