Sn-rich Au-Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stabl...Sn-rich Au-Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au-Sn system makes a major contribution to the high bonding shear strength. The maximum shear strength of 64 MPa and a leak rate lower than 4.9×10^-7 atm.cc/s have been obtained for Au46Sn54 solder bonded at 310 ℃. This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.展开更多
基金supported by the State Key Development Program for Basic Research of China(Nos.2009CB320305,2011CB933102)the National Natural Science Foundation of China(Nos.61234007,61201104,61274001)
文摘Sn-rich Au-Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au-Sn system makes a major contribution to the high bonding shear strength. The maximum shear strength of 64 MPa and a leak rate lower than 4.9×10^-7 atm.cc/s have been obtained for Au46Sn54 solder bonded at 310 ℃. This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.
