A SiC MESFET structure is successfully prepared on a semi-insulated 50mm SiC substrate using a hotwall SiC reactor. The doping concentration for the channel layer is about 1.7 × 10^17 cm^-3 , and the thickness is...A SiC MESFET structure is successfully prepared on a semi-insulated 50mm SiC substrate using a hotwall SiC reactor. The doping concentration for the channel layer is about 1.7 × 10^17 cm^-3 , and the thickness is about 0.35μm. An unintentionally n-doped buffer layer is employed between the substrate and the channel layer. A cap layer for Ohmic contact is doped to 10^19cm^-3. MESFET devices are fabricated using inductively coupled plasma etching and other conventional tools. Power devices with a 1mm gate width are measured and a 2W output at 2GHz is obtained.展开更多
文摘A SiC MESFET structure is successfully prepared on a semi-insulated 50mm SiC substrate using a hotwall SiC reactor. The doping concentration for the channel layer is about 1.7 × 10^17 cm^-3 , and the thickness is about 0.35μm. An unintentionally n-doped buffer layer is employed between the substrate and the channel layer. A cap layer for Ohmic contact is doped to 10^19cm^-3. MESFET devices are fabricated using inductively coupled plasma etching and other conventional tools. Power devices with a 1mm gate width are measured and a 2W output at 2GHz is obtained.
