This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate termi...This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.展开更多
Two-dimensional DC and small-signal analysis of gate-to-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of gate...Two-dimensional DC and small-signal analysis of gate-to-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of gate-to-source distance can improve device performance, i.e. enhancing drain current, transconductance, and maximum oscillation frequency. This is associated with the peculiar dynamic of electrons in SiC MESFETs, which lead to a linear velocity regime in the source access region. The variations of gate-to-source capacitance, gate-to-drain capacitance, and cut-off frequency with respect to the change in gate-to-source length have also been studied in detail.展开更多
This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain curr...This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.展开更多
A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introduc...A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.展开更多
In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements ...In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 #m gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave （CW） at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency （fT） and the maximum frequency （fmax） are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.展开更多
A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the c...A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.展开更多
An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the static and dynamic electrical performances are analyzed.A high doped n-type surface layer is app...An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the static and dynamic electrical performances are analyzed.A high doped n-type surface layer is applied to obtain a low source parasitic series resistance, while the step-gate structure is utilized to reduce the gate capacitance by the elimination of the depletion layer extension near the gate edge, thereby improving the RF characteristics and still maintaining a high breakdown voltage and a large drain current in comparison with the published SiC MESFETs with a dual-channel layer.Detailed numerical simulations demonstrate that the gate-to-drain capacitance, the gate-to-source capacitance, and the source parasitic series resistance of the proposed structure are about 4%, 7%, and 18% smaller than those of the dual-channel structure, which is responsible for 1.4 and 6 GHz improvements in the cut-off frequency and the maximum oscillation frequency.展开更多
Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a ga...Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.展开更多
A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A compariso...A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal Ⅰ-Ⅴ models is made through the Levenberg-Marquardt method for fitting in nonlinear regression. The results show that the new model has the advantages of high accuracy, easily making initial value and robustness over other models. The more accurate results are obtained by the improved channel modulation and saturation voltage coefficient when the device is operated in the sub-threshold and near pinch-off region. In addition the new model can be implemented to CAD tools directly, using for design of 4H-SiC MESFET based RF＆MW circuit, particularly MMIC （microwave monolithic integrate circuit）.展开更多
With sidegating bias,hysteresis of sidegating effect is usually observed in drain current.The experimental results presented in this letter demonstrate that the hysteresis with time-based characteristics is closely re...With sidegating bias,hysteresis of sidegating effect is usually observed in drain current.The experimental results presented in this letter demonstrate that the hysteresis with time-based characteristics is closely related to EL2 traps and channel-substrate(C-S)junction peculiarities.The response of depletion region of C-S junction to the electron capture and emission by trap-EL2 plays an important role in the hysteresis.Furthermore,a new mechanism is proposed to explain the time-based characteristics of hysteresis,i.e.,there is a "steady-state" in which the hysteresis disappears.展开更多
The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and...The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and phase have been carried out within a frequency range of 10 Hz to 10 kHz,and various voltage values of gatesource（Vgs= 0,-0.2,-0.3,-0.35,-0.4,-0.45,-0.5 and-0.6 V） and drain-source（Vds= 0.7,0.9,1,1.5and 2 V） Based on the concept of complex permittivity of semiconductor material,complex capacitance is used to analyze and simulate frequency dispersion of output reactance and capacitance of GaAs MESFETs.The results show that conductor losses which dominate the dielectric loss tangent are attributed to trapping mechanisms at the interface of devices;so they influence the frequency dispersion of output reactance and capacitance in particular at low frequencies.This reveals that frequency dispersion of these parameters is also related to dielectric loss tangent of semiconductor materials which affects the response of electronic devices according to frequency variation.展开更多
基金Project supported by Major State Basic Research Development Program of China (Grant No 51327010101)
文摘This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.
基金This work was supported by the Major State Basic Research Development Program of China, under Contract 51327010101.
文摘Two-dimensional DC and small-signal analysis of gate-to-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of gate-to-source distance can improve device performance, i.e. enhancing drain current, transconductance, and maximum oscillation frequency. This is associated with the peculiar dynamic of electrons in SiC MESFETs, which lead to a linear velocity regime in the source access region. The variations of gate-to-source capacitance, gate-to-drain capacitance, and cut-off frequency with respect to the change in gate-to-source length have also been studied in detail.
文摘This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.
文摘A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.
文摘In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 #m gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave （CW） at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency （fT） and the maximum frequency （fmax） are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.
基金Project supported by the National Natural Science Foundation of China (Grant No 60606022)the State Key Development Program for Basic Research of China (Grant No 51327010101)Xi’an Applied Materials Innovation Fund,China (Grant No XA-AM-200702)
文摘A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.
基金supported by the State Key Development Program for Basic Research of China(No.51327010101)
文摘An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the static and dynamic electrical performances are analyzed.A high doped n-type surface layer is applied to obtain a low source parasitic series resistance, while the step-gate structure is utilized to reduce the gate capacitance by the elimination of the depletion layer extension near the gate edge, thereby improving the RF characteristics and still maintaining a high breakdown voltage and a large drain current in comparison with the published SiC MESFETs with a dual-channel layer.Detailed numerical simulations demonstrate that the gate-to-drain capacitance, the gate-to-source capacitance, and the source parasitic series resistance of the proposed structure are about 4%, 7%, and 18% smaller than those of the dual-channel structure, which is responsible for 1.4 and 6 GHz improvements in the cut-off frequency and the maximum oscillation frequency.
文摘Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.
基金the National Defense Basic Research Program of China(Grant No.51327010101)
文摘A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal Ⅰ-Ⅴ models is made through the Levenberg-Marquardt method for fitting in nonlinear regression. The results show that the new model has the advantages of high accuracy, easily making initial value and robustness over other models. The more accurate results are obtained by the improved channel modulation and saturation voltage coefficient when the device is operated in the sub-threshold and near pinch-off region. In addition the new model can be implemented to CAD tools directly, using for design of 4H-SiC MESFET based RF＆MW circuit, particularly MMIC （microwave monolithic integrate circuit）.
文摘With sidegating bias,hysteresis of sidegating effect is usually observed in drain current.The experimental results presented in this letter demonstrate that the hysteresis with time-based characteristics is closely related to EL2 traps and channel-substrate(C-S)junction peculiarities.The response of depletion region of C-S junction to the electron capture and emission by trap-EL2 plays an important role in the hysteresis.Furthermore,a new mechanism is proposed to explain the time-based characteristics of hysteresis,i.e.,there is a "steady-state" in which the hysteresis disappears.
文摘The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and phase have been carried out within a frequency range of 10 Hz to 10 kHz,and various voltage values of gatesource（Vgs= 0,-0.2,-0.3,-0.35,-0.4,-0.45,-0.5 and-0.6 V） and drain-source（Vds= 0.7,0.9,1,1.5and 2 V） Based on the concept of complex permittivity of semiconductor material,complex capacitance is used to analyze and simulate frequency dispersion of output reactance and capacitance of GaAs MESFETs.The results show that conductor losses which dominate the dielectric loss tangent are attributed to trapping mechanisms at the interface of devices;so they influence the frequency dispersion of output reactance and capacitance in particular at low frequencies.This reveals that frequency dispersion of these parameters is also related to dielectric loss tangent of semiconductor materials which affects the response of electronic devices according to frequency variation.
