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Long range implantation by MEVVA metal ion source
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作者 ZHANG Tong-He WU Yu-Guang +2 位作者 MA Fu-Rong LIANG Hong (Key Laboratory in University for Radiation Beam Technology and Material modification, Institute of Low Energy Nuclear Physics, Beijing Normal University Beijing Radiation Center, Beijing 100875) 《Nuclear Science and Techniques》 SCIE CAS CSCD 2001年第1期16-20,共5页
Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The ... Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The results showthat the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux andhigh dose. The implanted depth is 311.6 times greater than that ofthe corresponding ion range. The ionspecies, doses and ion fluxes play an important part in the long-range implantation. Especially,thermal atom chemistry have specific effect on the long-range implantation during high ion fluximplantation at transient high target temperature. 展开更多
关键词 mevva离子源 离子移植 扩散技术
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