利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高...利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高浓度掺杂。在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重,射程短而溅射效应强,因此限制了 Er 原子浓度的进一步提高。在注量相同时,随束流密度的增加,Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤,但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系,给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅,随注量的增加 Er 保留量逐渐达到饱和,饱和量接近 2×1017 cm–2,而丢失量增加。展开更多
Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin...Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin film during the as-implanted state, but there was only single neodymium silicide compound in the postannealed state, and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violet luminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence (PL) increased with increasing the neodymium ion fluence. Moreover, the photoluminescence was closely dependent on the temperature of rapid thermal annealing (RTA). A mechanism of photoluminescence was discussed.展开更多
Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The ...Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The results showthat the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux andhigh dose. The implanted depth is 311.6 times greater than that ofthe corresponding ion range. The ionspecies, doses and ion fluxes play an important part in the long-range implantation. Especially,thermal atom chemistry have specific effect on the long-range implantation during high ion fluximplantation at transient high target temperature.展开更多
文摘利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高浓度掺杂。在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重,射程短而溅射效应强,因此限制了 Er 原子浓度的进一步提高。在注量相同时,随束流密度的增加,Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤,但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系,给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅,随注量的增加 Er 保留量逐渐达到饱和,饱和量接近 2×1017 cm–2,而丢失量增加。
基金National Natural Science Foundation (No. 59671051)
文摘Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin film during the as-implanted state, but there was only single neodymium silicide compound in the postannealed state, and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violet luminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence (PL) increased with increasing the neodymium ion fluence. Moreover, the photoluminescence was closely dependent on the temperature of rapid thermal annealing (RTA). A mechanism of photoluminescence was discussed.
基金The National Natural Science Foundation (Nos.59671051 and 59871003), and tile 863High Technology Program (863-715-023-02-01)
文摘Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The results showthat the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux andhigh dose. The implanted depth is 311.6 times greater than that ofthe corresponding ion range. The ionspecies, doses and ion fluxes play an important part in the long-range implantation. Especially,thermal atom chemistry have specific effect on the long-range implantation during high ion fluximplantation at transient high target temperature.
