Cubic phase MgxZn1-x O/MgO multilayer heterostructures （c-Mgx Zn1-xO/MgO MHs） are grown on Si（100） and quartz substrates by reactive electron beam evaporation at low temperature （250℃）. Cross-sectional morpholo...Cubic phase MgxZn1-x O/MgO multilayer heterostructures （c-Mgx Zn1-xO/MgO MHs） are grown on Si（100） and quartz substrates by reactive electron beam evaporation at low temperature （250℃）. Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-x O/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly （100）-oriented. Optical trans- mission investigations of c-Mgx Zn1-x O/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 39Gnm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect.展开更多
MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis ...MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400-760nm at the incident angle of 70°. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24. eV at x=0 to 3.90 eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50472058.
文摘Cubic phase MgxZn1-x O/MgO multilayer heterostructures （c-Mgx Zn1-xO/MgO MHs） are grown on Si（100） and quartz substrates by reactive electron beam evaporation at low temperature （250℃）. Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-x O/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly （100）-oriented. Optical trans- mission investigations of c-Mgx Zn1-x O/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 39Gnm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect.
文摘MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400-760nm at the incident angle of 70°. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24. eV at x=0 to 3.90 eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.
