High Performance Top-Emitting Organic Light-Emitting Diodes for Super Video Graphics Array Monochromatic Microdisplays Application

We have demonstrated a high perlbrmance top-emitting organic light-emitting diode （TEOLED） achieving a brightness of 1000 cd/m^2 at a low voltage of 3.4 V, a power efficiency of 55.2 lm/W at a brightness of 611cd/m^2. and a low efficiency roll-off 5.1% calculated from the maximum efficiency value to that of 5000 cd/m^2. Such im- proved properties are controlled by electron injection from 7-diphenyl-1,10-phenanthroline （BPhen） into and trans- port by the 2,4,6-tris[3＇-（pyridin-3-yl）biphenyl-3-yl]-l,3,5-triazine （TmPPPyTz） layer along with hole injection from 4,4＇,4＂-tris（N-carbazolyl）diphenylamine （TcTa） directly into the fac-tris（2-phenylpyridine）iridium [lr（ppy）3] highest occupied molecular level （HOMO）, leading to direct carrier recombination and excitons formation on the phosphor dopants. Eventually we integrated our high performance TEOLEDs on complementary metal oxide semi- conductor （CMOS） substrates to realize super video graphics array （SVGA） OLED microdisplays.

A new OLED SPICE model for pixel circuit simulation in OLED-on-silicon microdisplay design

A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I-V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.

Directional high-efficiency nanowire LEDs with reduced angular color shift for AR and VR displays

The emission wavelength of InGaN/GaN dot-in-wire LED can be tuned by modifying the nanowire diameter,but it causes mismatched angular distributions between blue,green,and red nanowires because of the excitation of different waveguide modes.Besides,the far-field radiation patterns and light extraction efficiency are typically calculated by center dipoles,which fails to provide accurate results.To address these issues,we first compare the simulation results between central dipole and dipole cloud with experimental data.Next,we calculate and analyze the display metrics for full-color nanowire LEDs by 3D dipole cloud.Finally,we achieve unnoticeable angular color shift within±20°viewing cone for augmented reality(AR)and virtual reality(VR)displays with an improved light extraction efficiency.

Design of a 16 gray scales 320×240 pixels OLED-on-silicon driving circuit

A 320×240 pixel organic-light-emitfing-diode-on-silicon （OLEDoS） driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three- transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit＇s power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4 × 28.4μm^2 and the display area is 10.7 × 8.0 mm^2 （the diagonal is about 13 mm）. The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.