Photodetector based on Ruddlesden-Popper perovskite microwires with broader band detection

Recently,the two-dimensional(2D)form of Ruddlesden-Popper perovskite(RPP)has been widely studied.However,the synthesis of one-dimensional(1D)RPP is rarely reported.Here,we fabricated a photodetector based on RPP microwires(RPP-MWs)and compared it with a 2D-RPP photodetector.The results show that the RPP-MWs photodetector possesses a wider photoresponse range and higher responsivities of 233 A/W in the visible band and 30 A/W in the near-infrared(NIR)band.The analyses show that the synthesized RPP-MWs have a multi-layer,heterogeneous core-shell structure.This structure gives RPP-MWs a unique band structure,as well as abundant trap states and defect levels,which enable them to acquire better photoresponse performance.This configuration of RPP-MWs provides a new idea for the design and application of novel heterostructures.

Preparation and photodetection performance of high crystalline quality and large size β-Ga_(2)O_(3)microwires

Ultrawide band gap semiconductors are promising solar-blind ultraviolet(UV)photodetector materials due to their suitable bandgap,strong absorption and high sensitivity.Here,β-Ga_(2)O_(3)microwires with high crystal quality and large size were grown by the chemical vapor deposition(CVD)method.The microwires reach up to 1 cm in length and were single crystalline with low defect density.Owing to its high crystal quality,a metal–semiconductor–metal photodetector fabricated from a Ga_(2)O_(3)microwire showed a responsivity of 1.2 A/W at 240 nm with an ultrahigh UV/visible rejection ratio(R_(peak)/R_(400 nm))of 5.8×10^(5),indicating that the device has excellent spectral selectivity.In addition,no obvious persistent photoconductivity was observed in the test.The rise and decay time constants of the device were 0.13 and 0.14 s,respectively.This work not only provides a growth method for high-quality Ga_(2)O_(3)microwires,but also demonstrates the excellent performance of Ga_(2)O_(3)microwires in solar-blind ultraviolet detection.

MICROWIRE总线与SPI总线的接口设计与应用

MICROWIRE总线与SPI总线是目前应用非常广泛的两种同步串行总线,由于两种总线协议的不完全兼容性,造成许多设备之间无法进行通信。通过对PIC16F73单片机的SPI串口时序和电机控制专用芯片SA866的MICROWIRE串口时序的研究,给出了正确配置SPI模式的方法,并通过软件的转换控制,成功解决了SPI与MICROWIRE两种不同协议之间相互通信的问题。

Three-Dimensional Metacomposite Based on Different Ferromagnetic Microwire Spacing for Electromagnetic Shielding

An electromagnetic shielding metacomposite based on the absorbing mechanism was prepared by weaving ferromagnetic microwires into the three-dimensional(3D)fabric.The influence of the ferromagnetic microwire spacing on electromagnetic shielding performance and the electromagnetic shielding mechanism of 3D metacomposites were studied.The total electromagnetic shielding performance increases with the increase of electromagnetic wave frequency.3D metacomposites based on the absorbing mechanism can avoid the secondary pollution of electromagnetic waves,and have great potential in military,civil,aerospace and other fields.

Microwire formation based on dielectrophoresis of electroless gold plated polystyrene microspheres

Microspheres coated with a perfectly conductive surface have many advantages in the applications of biosensors and micro-electromechanical systems.Polystyrene microspheres with the diameter of 10 μm were coated with a 50 nmthick gold layer using an electroless gold plating approach.Dielectrophoresis(DEP) for bare microspheres and shelled microspheres was theoretically analysed and the real part of the Clausius-Mossotti factor was calculated for the two kinds of microspheres.The experiments on the dielectrophoretic characterisation of the uncoated polystyrene microspheres and gold coated polystyrene microspheres(GCPMs) were carried out.Experimental results showed that the gold coated polystyrene microspheres were only acted by a positive dielectrophoretic force when the frequency was below 40M Hz,while the uncoated polystyrene microspheres were governed by a negative dielectrophoretic force in this frequency range.The gold coated polystyrene microspheres were exploited to form the microwire automatically according to their stable dielectrophoretic and electric characterisations.

Room temperature non-balanced electric bridge ethanol gas sensor based on a single ZnO microwire

In this paper,ultra-long and large-scaled ZnO microwire arrays are grown by the chemical vapor deposition method,and a single ZnO microwire-based non-balanced electric bridge ethanol gas sensor is fabricated.The experimental results show that the gas sensor has good repeatability,high response rate,short response,and recovery time at room temperature(25℃).The response rate of the gas sensor exposed to 90-ppm ethanol is about 93%,with a response time and recovery time are 0.3 s and 0.7 s respectively.As a contrast,the traditional resistive gas sensor of a single ZnO microwire shows very small gas response rate.Therefore,ethanol gas sensor based on non-balanced electric bridge can obviously enhance gas sensing characteristics,which provides a feasible method of developing the high performance ZnO-based gas sensor.

MICROWIRE串行接口

ＭＩＣＲＯＷＩＲＥ是一种简单的三线串行通讯接口。在ＣＯＰＳ系列单片机控制器与外围设备间进行符合标准化协议的串行通讯。本文主要是对ＭＩＣＲＯＷＩＲＥ串行接口的逻辑操作和软、硬件作一简单介绍。

MICROWIRE／RLUS总线在MCS－51系列单片机中的实现及应用

本文介绍了目前单片机应用中较为流行的串行同步外围接口MICROWIRE／RLUS，并以AT89C51单片机控制某语音信号处理芯片为例，给出了使用MCS－51系列单片机模拟MICROWIRE／RLUS总线与语音信号处理芯片通信的程序。

Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier

One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.

Effect of chemical ordering annealing on superelasticity of Ni-Mn-Ga-Fe ferromagnetic shape memory alloy microwires

Ni50Mn25Ga20Fe5 ferromagnetic shape memory alloy microwires with diameters of^30-50μm and grain sizes of^2-5μm were prepared by melt-extraction technique.A step-wise chemical ordering annealing was carried out to improve the superelasticity strain and recovery ratio which were hampered by the internal stress,compositional inhomogeneity,and high-density defects in the as-extracted Ni50Mn25Ga20Fe5 microwires.The annealed microwires exhibited enhanced atomic ordering degree,narrow thermal hysteresis,and high saturation magnetization under a low magnetic field.As a result,the annealed microwire showed decreased superelastic critical stress,improved reversibility,and a high superelastic strain(1.9%)with a large recovery ratio(>96%).This kind of filamentous material with superior superelastic effects may be promising materials for minor-devices.

Micromagnetic Structure of Co-Rich Amorphous Microwires

Results on the magneto-optical investigation of near-surface micromagnetic structure （MMS） of Co69Fe4Si12B15 amorphous wires 10-50 μm in diameter are presented. The wires were prepared by the rapid solidification technique. The magnetic field H was applied along or perpendicular to the wire length. By scanning the light spot of 1 μm-diameter along the wire length, distributions of magnetization components （both parallel and perpendicular to the applied magnetic field） and also local hysteresis characteristics of the wires were measured. It was experimentally established that owing to the compressive stresses from quenching coupled with negative netostriction of Co-rich amorphous materials, the examined microwires have a circumferential magnetic anisotropy. In consequence, there are the near-sudece alternate left-and right-handled circular domains in these samples. The dependencies of the circular domain width on the wire diameter and length were found. It was discovered that in the axial magnetic field local hysteresis loops are unhysteretic. It was proved that in this case the dominant mechanism of the wire magnetization reversal is rotation of local magnetization vectors in circular domains.

MICROWIRE简介

为了方便美洲银行全球分行的内部通讯,美银早于十年前已发展一个遍布全球的专用电讯网和计算机系统网。经过多年的发展,它已经成为全球最具规模的私用电讯专网之一,为美洲银行在世界各地的分行提供专线电话、电报和数据的内部通讯。这个私用电话专网。

Microstructure and magnetocaloric properties of melt-extracted SmGdDyCoAl high-entropy amorphous microwires

This paper presents a systematic investigation of the microstructure and magnetocaloric properties of melt-extracted Sm_(20)Gd_(20)Dy_(20)Co_(20)Al_(20)high-entropy microwires.The fabricated wires exhibited an amorphous structure,and the temperature interval of the undercooled liquid AT was 45 K.The microwires underwent a second-order magnetic transition from a ferromagnetic to a paramagnetic state near the Curie temperature(T_(C)=52 K),The maximum magnetic entropy change(-ΔS_M^(max)),the relative cooling power and the refrigeration capacity reached 6.34 J·kg^(-1)·K^(-1).422.09 J·kg^(-1)and 332.94 J·kg^(-1),respectively,under a magnetic field change of 5 T.In addition,the temperature-averaged entropy changes with two temperature lifts(3 and 10 K)were 6.32 and 6.27 J·kg^(-1)·K^(-1),respectively.The good magnetocalorie performance highlights the significant potential for the Sm_(20)Gd_(20)Dy_(20)Co_(20)Al_(20)microwires to be used as magnetic refrigerant materials in low-temperature region applications.This work will serve as a valuable reference for future investigations on low-temperature high-entropy magnetocaloric materials.

Chlorine-substituted chiral 2D perovskite microwires with enhanced lattice rigidity for sensitive circularly polarized light detection

Chiral two-dimensional(2D) perovskites offer numerous attractive features for optoelectronics owing to their soft, deformable lattices and a high degree of chemical tunability. While tremendous advances have been made in perovskite-based direct circularly polarized light(CPL) detection, the low circular polarization anisotropy factor and sensitivity of those photodetectors arising from large lattice distortion still limit practical applications. Herein, chiral 2D perovskite-based single-crystalline microwire arrays with enhanced circular dichroism(CD) absorption are fabricated with the synergy of the capillary-bridgeconfined assembly method and chlorine-substituted phenethylamine(Cl-MBA). Compared with phenethylamine(MBA)-inserted perovskites, the smaller lattice distortion and increased halogen–halogen interaction within Cl–MBA-inserted perovskites strengthen lattice rigidity and weaken electron–phonon coupling to improve carrier transport and thermal stability, resulting in high-performance CPL photodetectors with an anisotropy factor of 0.25, responsivity exceeding 95.7±9.3 A W^(-1)and detectivity exceeding(3.05±0.30)×10^(13)Jones. This work opens a new perspective to modulate circular polarization sensitivity and will be helpful to realize promising implementations in quantum computation and communication.

High-performance self-powered ultraviolet photodetector in SnO_(2)microwire/p-GaN heterojunction using graphene as charge collection medium

Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance,high carrier mobility,and ultrafast carrier dynamics.In this study,a high-performance self-powered photodetector,which is made of a SnO_(2)microwire,p-type GaN film,and monolayer graphene transparent electrode,was proposed and fabricated.The detector is sensitive to ultraviolet light signals and illustrates pronounced detection performances,including a peak respon-sivity∼223.7 mA W^(-1),a detectivity∼6.9×10^(12)Jones,fast response speed(rising/decaying times∼18/580μs),and excellent external quantum efficiency∼77%at 360 nm light illumination without exter-nal power supply.Compared with the pristine SnO_(2)/GaN photodetector using ITO electrode,the device performances of responsivity and detectivity are significantly increased over 6×10^(3)%and 3×10^(3)%,respectively.The performance-enhanced characteristics are mainly attributed to the high-quality het-erointerface of n-SnO_(2)/p-GaN,the highly conductive capacity,and the unique transparency of graphene electrodes.Particularly,the built-in potential formed at the SnO_(2)/GaN heterojunction interface could be strengthened by the Schottky potential barrier derived from the graphene electrode and SnO_(2)wire,en-hancing the carrier collection efficiency through graphene as a charge collection medium.This work is of great importance and significance to developing excellent-performance ultraviolet photodetectors for photovoltaic and optoelectronic applications in a self-powered operation manner.

Intrinsic two-way shape memory effect in a Ni-Mn-Sn metamagnetic shape memory microwire

An intrinsic two-way shape memory effect with a fully recoverable strain of 1.0%was achieved in an as-prepared Ni50Mn37.5Sn12.5 metamagnetic shape memory microwire fabricated by Taylor-Ulitovsky method.This two-way shape memory effect is mainly owing to the internal stress caused by the retained martensite in austenite matrix,as revealed by transmission electron microscopy observations and highenergy X-ray diffraction experiments.After superelastic training for 30 loading/unloading cycles at room temperature,the amount of retained martensite increased and the recoverable strain of two-way shape memory effect increased significantly to 2.2%.Furthermore,a giant recoverable strain of 11.2%was attained under a bias stress of 300 MPa in the trained microwire.These properties confer this microwire great potential for micro-actuation applications.

The combined effects of grain and sample sizes on the mechanical properties and fracture modes of gold microwires

Hall-Petch relation was widely applied to evaluate the grain size effect on mechanical properties of metallic material. However, the sample size effect on the Hall-Petch relation was always ignored. In the present study, the mechanical test and microstructure observation were performed to investigate the combined effects of grain and sample sizes on the deformation behaviors of gold microwires. The polycrystalline gold microwires with diameter of 16 ?m were annealed at temperatures from 100°C to 600°C, leading to different ratios(t/d) of wire diameter(t) to grain size(d) from 0.9 to 16.7. When the t/d was lower than 10, the yield stress dropped fast and deviated from the Hall-Petch relation. The free-surface grains played key role in the yield stress softening, and the volume fraction of free-surface grains increased with the t/d decreasing. Furthermore, the effects of t/d on work-hardening behaviors and fracture modes were also studied. With t/d value decreasing from 17 to 3.4, the samples exhibited necking fracture and the dislocation pile-ups induced work-hardening stage was gradually activated.With the t/d value further decreasing(t/d < 3.4), the fracture mode turned into shear failure, and the work-hardening capability lost. As the gold microwire for wire bonding is commonly applied in the packaging of integrated circuit chips, and the fabrication of microwire suffers multi-pass cold-drawing and annealing treatments to control the grain size. The present study could provide instructive suggestion for gold microwire fabrication and bonding processes.

High-mobility induced high-performance self-powered ultraviolet photodetector based on single ZnO microwire/PEDOT:PSS heterojunction via slight ga-doping

Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricating ultraviolet photodetectors(PDs)due to their proper bandgap,unique optoelectronic properties,large surface-to-volume ratio and good integration.However,semiconducting micro/nanostructures suffer from low electron conductivity and abundant surface defects,which greatly limits their practical application in developing PDs.In this work,an ultraviolet PD consisting of single Ga-doped ZnO microwire(ZnO:Ga MW)and p-type poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)was designed.When exposed to ultraviolet illumination,the PD exhibits excellent performance(responsivity~185 m A/W,detectivity~2.4×10^(11) Jones,and fast response speed of~212μs for rise time and~387μs for decay time)under self-driven conditions.Compared with that of an undoped Zn O MWbased PD,the responsivity and detectivity of ZnO:Ga MW/PEDOT:PSS PD are significantly enhanced over 400%and 600%,respectively.Due to the incorporation of Ga element,the charge transport properties of a ZnO:Ga MW,specifically for the mobility,are effectively enhanced,which can substantially facilitate the generation,separation,transport and harvest efficiency of photo-generated carriers in the asfabricated PD.Besides,the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density,further suggesting a high-quality ZnO:Ga MW/PEDOT:PSS heterojunction.This work provides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.

Formation and Optical Properties of ZnO:ZnFe_(2)O_(4) Superlattice Microwires

Pure ZnO hexagonal microwires and Fe(Ⅲ)-doped ZnO microwires(MWs)with a novel rectangular cross section were synthesized in a confined chamber by a convenient one-step thermal evaporation method.An oriented attachment mechanism is consistent with a vapor-solid growth process.Photoluminescence(PL)and Raman spectroscopy of the Fe(Ⅲ)-doped ZnO MWs and in situ spectral mappings indicate a quasi-periodic distribution of Fe(Ⅲ)along a one-dimensional(1-D)superlattice ZnO:ZnFe_(2)O_(4) wire,while PL mapping shows the presence of optical multicavities and related multimodes.The PL spectra at room temperature show weak near-edge doublets(376 nm and 383 nm)and a broad band(450-650 nm)composed of strong discrete lines,due to a 1-D photonic crystal structure.Such a 1-D coupled optical cavity material may find many applications in future photonic and spintronic devices.