Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photol...Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃.展开更多
We deliver the realistic ab initio lattice investigations of KK^- scattering. In the Asqtad-improved staggered dynamical fermion formulation, we carefully measure KK^- four-point function in the I=0 channel by moving ...We deliver the realistic ab initio lattice investigations of KK^- scattering. In the Asqtad-improved staggered dynamical fermion formulation, we carefully measure KK^- four-point function in the I=0 channel by moving wall sources without gauge fixing, and clearly find an attractive interaction in this channel, which is in agreement with the theoretical predictions. An essential ingredient in our lattice calculation is to properly treat the disconnected diagram. Moreover, we explain the difficulties of these lattice calculations, and discuss the way to improve the statistics. Our lattice investigations are carried out with the MILC 2 ＋ 1 gauge configuration at lattice spacing a ≈ 0.15 fro.展开更多
文摘Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃.
基金Supported by Fundamental Research Funds for the Central Universities under Grant No.2010SCU23002
文摘We deliver the realistic ab initio lattice investigations of KK^- scattering. In the Asqtad-improved staggered dynamical fermion formulation, we carefully measure KK^- four-point function in the I=0 channel by moving wall sources without gauge fixing, and clearly find an attractive interaction in this channel, which is in agreement with the theoretical predictions. An essential ingredient in our lattice calculation is to properly treat the disconnected diagram. Moreover, we explain the difficulties of these lattice calculations, and discuss the way to improve the statistics. Our lattice investigations are carried out with the MILC 2 ＋ 1 gauge configuration at lattice spacing a ≈ 0.15 fro.
