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LW6-110IC与PASS MO开关操作性能之比较
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作者 戴翔胜 郭斌 《科技风》 2008年第8期84-84,共1页
与LW6-110IC相比,PASS MO组合电器设备更符合现代化、科技化、智能化、快速化变电站的发展要求。
关键词 新街口变电站 LW6-110IC PASS mo开关
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A 2GHz Low Power Differentially Tuned CMOS Monolithic LC-VCO 被引量:1
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作者 张利 池保勇 +2 位作者 姚金科 王志华 陈弘毅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第9期1543-1547,共5页
A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range (from 1. 8998 to 2. 2335GHz) through a combination of analog and digital tun... A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range (from 1. 8998 to 2. 2335GHz) through a combination of analog and digital tuning techniques (4-bit binary switch-capacitor array). The measured phase noise is - 118.17dBc/Hz at a 1MHz offset from a 2. 158GHz carrier. With the presented improved switch,the phase noise varies no more than 3dB at different digital control bits. The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors. The VCO draws a current of about 2. lmA from a 1.8V power supply and works normally with a 1.5V power supply. 展开更多
关键词 binary switchable-capacitor array CmoS differentially tuned phase noise VCO
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A wideband low-phase-noise LC VCO for DRM/DAB frequency synthesizer
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作者 雷雪梅 王志功 王科平 《Journal of Southeast University(English Edition)》 EI CAS 2010年第4期528-531,共4页
The wideband CMOS voltage-controlled oscillator(VCO)with low phase noise and low power consumption is presented for a DRM/DAB(digital radio mondiale and digital audio broadcasting)frequency synthesizer.In order to... The wideband CMOS voltage-controlled oscillator(VCO)with low phase noise and low power consumption is presented for a DRM/DAB(digital radio mondiale and digital audio broadcasting)frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply. 展开更多
关键词 CmoS voltage-controlled oscillator switched capacitor bank moS varactors WIDEBAND low phase noise DRM/DAB frequency synthesizer
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