用金属有机物化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)制备了 TiN 薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了 TiN 薄膜的电学性质．结果表明,多次循环会引入界面而增大电阻率, 与薄膜成分...用金属有机物化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)制备了 TiN 薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了 TiN 薄膜的电学性质．结果表明,多次循环会引入界面而增大电阻率, 与薄膜成分和微结构分析的结果一致．得到了单循环的最优厚度以使样品电阻率最低．通过相同循环、不同厚度样品在真实器件中电学性能的比较,发现介窗(Via)直径越小,TiN 薄膜对介窗电阻的影响越大．展开更多
Introduction In;O;·Sn films have high transparency（>95％） within the visible spectral region, low resistivity(10;—10;ohm·cm) at room temperature and superior thermal stability. These films have been ap...Introduction In;O;·Sn films have high transparency（>95％） within the visible spectral region, low resistivity(10;—10;ohm·cm) at room temperature and superior thermal stability. These films have been applied to solar cells, electronics and photoelectronics fields. In recent years, organometallic-CVD method has emerged as a successful alternate to the physical methods and general CVD for the growth of these films. The MO-CVD tech-展开更多
文摘用金属有机物化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)制备了 TiN 薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了 TiN 薄膜的电学性质．结果表明,多次循环会引入界面而增大电阻率, 与薄膜成分和微结构分析的结果一致．得到了单循环的最优厚度以使样品电阻率最低．通过相同循环、不同厚度样品在真实器件中电学性能的比较,发现介窗(Via)直径越小,TiN 薄膜对介窗电阻的影响越大．
基金Supported by the National Natural Science Foundation of China
文摘Introduction In;O;·Sn films have high transparency（>95％） within the visible spectral region, low resistivity(10;—10;ohm·cm) at room temperature and superior thermal stability. These films have been applied to solar cells, electronics and photoelectronics fields. In recent years, organometallic-CVD method has emerged as a successful alternate to the physical methods and general CVD for the growth of these films. The MO-CVD tech-
