利用二维动力学模型,通过变化MOCVD(metal organic chemical vapor deposition)反应器的进气流量、操作压力、衬底温度、基座旋转等几个重要工艺控制参数,计算了反应器内部均匀的流场和热场分布的形态变化,描述了输运过程中产生的多种...利用二维动力学模型,通过变化MOCVD(metal organic chemical vapor deposition)反应器的进气流量、操作压力、衬底温度、基座旋转等几个重要工艺控制参数,计算了反应器内部均匀的流场和热场分布的形态变化,描述了输运过程中产生的多种流动现象,并给出了相应的分析与说明.在此基础上,通过微扰反应器的进气量,计算并图形化了质量输运过程的瞬态行为,分析了延迟时间、驰豫振荡、自脉动振荡等瞬态现象产生的原因,为高品质外延生长工艺的设计与实施,提供了有益的解决途径.展开更多
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati...Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.展开更多
The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of...The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of nitride based LEDs,the use of GaN IED has the potential to compete with 1raditional filament and discharge lamps,for the provision of white lighting,and there has been an explosion of interest in the MOCVD growth of GaN based materials with an increasing focus on large area multiwafer reactors and wafer uniforrmity.This paper will review the design philosophy and characteristics of close-coupled showerhead reactors,relating these to the requirements of group Ⅲ-nitride growth,and will present a selection of data resulting from the operation of such equipment.These results suggest that the close coupled showerhead style of reactor is very suitable for the growth of GaN based structures in both research and production environments.展开更多
文摘利用二维动力学模型,通过变化MOCVD(metal organic chemical vapor deposition)反应器的进气流量、操作压力、衬底温度、基座旋转等几个重要工艺控制参数,计算了反应器内部均匀的流场和热场分布的形态变化,描述了输运过程中产生的多种流动现象,并给出了相应的分析与说明.在此基础上,通过微扰反应器的进气量,计算并图形化了质量输运过程的瞬态行为,分析了延迟时间、驰豫振荡、自脉动振荡等瞬态现象产生的原因,为高品质外延生长工艺的设计与实施,提供了有益的解决途径.
基金Projects(61376076,61274026,61377024)supported by the National Natural Science Foundation of ChinaProjects(12C0108,13C321)supported by the Scientific Research Fund of Hunan Provincial Education Department,ChinaProjects(2013FJ2011,2013FJ4232)supported by the Science and Technology Plan of Hunan Province,China
文摘Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.
文摘The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of nitride based LEDs,the use of GaN IED has the potential to compete with 1raditional filament and discharge lamps,for the provision of white lighting,and there has been an explosion of interest in the MOCVD growth of GaN based materials with an increasing focus on large area multiwafer reactors and wafer uniforrmity.This paper will review the design philosophy and characteristics of close-coupled showerhead reactors,relating these to the requirements of group Ⅲ-nitride growth,and will present a selection of data resulting from the operation of such equipment.These results suggest that the close coupled showerhead style of reactor is very suitable for the growth of GaN based structures in both research and production environments.
