We obtained the output characteristics in wurtzite Al0.15Ga0.85N/GaN MODFETs with the full band Monte Carlo method. The gate length Lg and the channel length Los in the device are 0.2 μm and 0.4 urn, respectively. In...We obtained the output characteristics in wurtzite Al0.15Ga0.85N/GaN MODFETs with the full band Monte Carlo method. The gate length Lg and the channel length Los in the device are 0.2 μm and 0.4 urn, respectively. In the output characteristics we found a differential negative resistance effect. That is, as VDS is a constant, initially, VDS increases with increasing VDS. When VDS exceeds a certain critical value, IDS decreases with increasing VDS. The analysis for velocity-field characteristics in wurtzite CaN, the distributions of the electric field and the electron velocity in the two dimensional electron gas channel indicates that the differential negative resistance effect of the electron average velocity results in the differential negative resistance effect of the output characteristics. The transient transport also is related to the differential negative resistance effect of the output characteristics. This effect only can be observed in the devices with very short channel.展开更多
The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on th...The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET（modulation doped field effect transistor） for optimum DC and RF characteristics.展开更多
文摘We obtained the output characteristics in wurtzite Al0.15Ga0.85N/GaN MODFETs with the full band Monte Carlo method. The gate length Lg and the channel length Los in the device are 0.2 μm and 0.4 urn, respectively. In the output characteristics we found a differential negative resistance effect. That is, as VDS is a constant, initially, VDS increases with increasing VDS. When VDS exceeds a certain critical value, IDS decreases with increasing VDS. The analysis for velocity-field characteristics in wurtzite CaN, the distributions of the electric field and the electron velocity in the two dimensional electron gas channel indicates that the differential negative resistance effect of the electron average velocity results in the differential negative resistance effect of the output characteristics. The transient transport also is related to the differential negative resistance effect of the output characteristics. This effect only can be observed in the devices with very short channel.
文摘The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET（modulation doped field effect transistor） for optimum DC and RF characteristics.
