Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack o...Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers.Here we report on the chromium（Cr） and manganese（Mn）doping in atomically-thin MoS_2 crystals grown by chemical vapor deposition.The Cr/Mn doped MoS_2 samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra,respectively,compared with the undoped one at 1.85 eV.The field-effect transistor（FET） devices based on the Mn doping show a higher threshold voltage than that of the pure MoS_2 while the Cr doping exhibits the opposite behavior.Importantly,the carrier concentration in these samples displays a remarkable difference arising from the doping effect,consistent with the evolution of the FET performance.The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy.The successful incorporation of the Mn and Cr impurities into the monolayer MoS_2 paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors.展开更多
基金Project supported by the National Young 1000 Talent Planthe Pujiang Talent Plan in Shanghai+1 种基金the National Natural Science Foundation of China(Nos.61322407,11474058,61674040)the Chinese National Science Fund for Talent Training in Basic Science(No.J1103204)
文摘Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers.Here we report on the chromium（Cr） and manganese（Mn）doping in atomically-thin MoS_2 crystals grown by chemical vapor deposition.The Cr/Mn doped MoS_2 samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra,respectively,compared with the undoped one at 1.85 eV.The field-effect transistor（FET） devices based on the Mn doping show a higher threshold voltage than that of the pure MoS_2 while the Cr doping exhibits the opposite behavior.Importantly,the carrier concentration in these samples displays a remarkable difference arising from the doping effect,consistent with the evolution of the FET performance.The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy.The successful incorporation of the Mn and Cr impurities into the monolayer MoS_2 paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors.
