Taking Dongting Lake district as the studying area and utilizing multi-temporal MOS-1b/MESSR data as remote sensing info source, by the combination operation and ratio transform processing and the image, spectrum and ...Taking Dongting Lake district as the studying area and utilizing multi-temporal MOS-1b/MESSR data as remote sensing info source, by the combination operation and ratio transform processing and the image, spectrum and histogram comparison of the MESSR image data of all bands for the flood season and dry season with the ERDAS IMAGINE system, a classification model was established, which can be used to acquire the spatial distributing information of water bodies. Meanwhile a water depth index model was derived and built, and then a model for detecting the depth of water body based on the non-linear recursive analysis was presented. By the overlay analysis of the classification thematic images based on the model for extracting flood information, the flooding area and distributing information were acquired.展开更多
Intercalation compounds of ferrous phenanthroline complexes in MoS-2 have been synthesized by inclusion of the intercalated species with aqueous solution of MoS-2 single layers. The characterization by X-ray diffracti...Intercalation compounds of ferrous phenanthroline complexes in MoS-2 have been synthesized by inclusion of the intercalated species with aqueous solution of MoS-2 single layers. The characterization by X-ray diffraction, elemental analysis and infrared spectroscopy indicates that the ferrous phenanthroline complexes are situated between the MoS-2 layers with the three-fold axis parallel to the c-axis of MoS-2.展开更多
A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate（CSG） MOSFETs has been developed.Based on this a subthreshold drai...A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate（CSG） MOSFETs has been developed.Based on this a subthreshold drain current model has also been derived.This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model.The fringing gate capacitances taken into account are outer fringe capacitance,inner fringe capacitance,overlap capacitance,and sidewall capacitance.The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily.展开更多
文摘Taking Dongting Lake district as the studying area and utilizing multi-temporal MOS-1b/MESSR data as remote sensing info source, by the combination operation and ratio transform processing and the image, spectrum and histogram comparison of the MESSR image data of all bands for the flood season and dry season with the ERDAS IMAGINE system, a classification model was established, which can be used to acquire the spatial distributing information of water bodies. Meanwhile a water depth index model was derived and built, and then a model for detecting the depth of water body based on the non-linear recursive analysis was presented. By the overlay analysis of the classification thematic images based on the model for extracting flood information, the flooding area and distributing information were acquired.
文摘Intercalation compounds of ferrous phenanthroline complexes in MoS-2 have been synthesized by inclusion of the intercalated species with aqueous solution of MoS-2 single layers. The characterization by X-ray diffraction, elemental analysis and infrared spectroscopy indicates that the ferrous phenanthroline complexes are situated between the MoS-2 layers with the three-fold axis parallel to the c-axis of MoS-2.
基金Project supported by the AICTE(No.8023/BOR/RID/RPS-253/2008-09)the SMDP-Ⅱ Project(No.21(1)/2005-VCND) by MCIT, DeiTy,Govt of India
文摘A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate（CSG） MOSFETs has been developed.Based on this a subthreshold drain current model has also been derived.This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model.The fringing gate capacitances taken into account are outer fringe capacitance,inner fringe capacitance,overlap capacitance,and sidewall capacitance.The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily.
