Interfacial and electrical characteristics of a HfO_2/n–InAlAs MOS-capacitor with different dielectric thicknesses

AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃;furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10-7 A/cm2 at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.

Digital 1 V 82 μW Pseudo-Two-Stage Class-AB OTA

A low power digital operational transconductance amplifier （OTA） was developed for low voltage switched capacitor applications. The OTA has a high slew rate （SR） and a large open loop gain with a dif- ferential pseudo-two-stage Class-AB structure. A fully compensated depletion mode capacitor is used in the switched capacitor common mode feedback block instead of a metal-insulator-metal （MIM） capacitor to reduce the fabrication cost. Simulations show that with a 1.0-V supply voltage and a 34-pF load at each output terminal, this digital differential pseudo-two-stage Class-AB OTA realized in 0.13-μm technology achieves a 63.5-dB DC gain and a 0.83-V output swing. The slew rate is ±16.29V/μs and the total power dissipation is only 82 μW.