High-temperature,high-power converters have gained importance in industrial applications given their ability to operate in adverse environments,such as in petroleum exploration,multi-electric aircrafts,and electric ve...High-temperature,high-power converters have gained importance in industrial applications given their ability to operate in adverse environments,such as in petroleum exploration,multi-electric aircrafts,and electric vehicles.SiC metaloxide-semiconductor field-effect transistor(MOSFET),a new,wide bandgap,high-temperature device,is the key component of these converters.In this study,the static and dynamic characteristics of the SiC MOSFET,half-bridge module,are investigated at the junction temperature of 180℃.A simplified experimental method is then proposed pertaining to the power operation of the SiC module at 180℃.This method is based on the use of a thermal resistance test platform and is proven convenient for the study of heat dissipation characteristics.The high-temperature characteristics of the module are verified based on the conducted experiments.Accordingly,a 100 kW high-temperature converter is built,and the test results show that the SiC converter can operate at a junction temperature of 180℃in a stable manner in compliance with the requirements of high-temperature,high-power applications.展开更多
A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift...A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.展开更多
基金supported by the National Key R&D Program of China (grant no. 2017YFB0903303)
文摘High-temperature,high-power converters have gained importance in industrial applications given their ability to operate in adverse environments,such as in petroleum exploration,multi-electric aircrafts,and electric vehicles.SiC metaloxide-semiconductor field-effect transistor(MOSFET),a new,wide bandgap,high-temperature device,is the key component of these converters.In this study,the static and dynamic characteristics of the SiC MOSFET,half-bridge module,are investigated at the junction temperature of 180℃.A simplified experimental method is then proposed pertaining to the power operation of the SiC module at 180℃.This method is based on the use of a thermal resistance test platform and is proven convenient for the study of heat dissipation characteristics.The high-temperature characteristics of the module are verified based on the conducted experiments.Accordingly,a 100 kW high-temperature converter is built,and the test results show that the SiC converter can operate at a junction temperature of 180℃in a stable manner in compliance with the requirements of high-temperature,high-power applications.
基金Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China(Grant No.2010ZX02201)the National Natural Science Foundation of China(Grant No.61176069)the National Defense Pre-Research of China(Grant No.51308020304)
文摘A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.
