飞机地面电源为飞机维护提供三相115 V/400 Hz中频电能,但由于现场保障距离远、负载功率大,线缆压降损失严重,导致飞机接口处电能质量超出国军标相关要求,需要进行实时电压补偿。传统的动态电压补偿器(Dynamic Voltage Restorer,DVR)利...飞机地面电源为飞机维护提供三相115 V/400 Hz中频电能,但由于现场保障距离远、负载功率大,线缆压降损失严重,导致飞机接口处电能质量超出国军标相关要求,需要进行实时电压补偿。传统的动态电压补偿器(Dynamic Voltage Restorer,DVR)利用双向晶闸管分组投切补偿变压器,但晶闸管开通与关断时间长,在中频条件下存在不可靠关断风险,且其通态损耗较大、发热问题严峻。针对上述问题,提出一种基于双向MOSFET的补偿变压器投切电路,每个补偿变压器副边串入供电线路,原边通过双向MOSFET开关连接于相线LN之间,并将另一组双向MOSFET开关连接补偿变压器原边。进一步提出了基于电流检测的补偿变压器平滑投切控制方法,根据漏感及激磁电感的续流通路,将投切电路分为四个工作模态,通过检测和分析各双向开关电流方向及大小,建立各MOSFET的控制逻辑。最后搭建2 kW实验样机,验证了所提投切电路及控制方法的有效性。展开更多
Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for ...Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade offs. The 1.9GHz Complementary Metal Oxide Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.展开更多
文摘Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade offs. The 1.9GHz Complementary Metal Oxide Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.
