V2O5 flower-like structures assembled by thin nanosheets were in-situ growth on ceramic tubes by hydrothermal process.The structural characterization indicates that V2O5 flower-like structures is orthogonal diamond ph...V2O5 flower-like structures assembled by thin nanosheets were in-situ growth on ceramic tubes by hydrothermal process.The structural characterization indicates that V2O5 flower-like structures is orthogonal diamond phase,which entirely covered on the surface of ceramic tubes.TMA sensing measured results revealed that the sensor based on V2O5 flower-like structures exhibited fast reversible and response,good selectivity to TMA and good stability at 200℃.The good sensing performance may be ascribed to flower-like structure s and directly growth sensing film on the ceramic tube without structure damage.Our works give a simple in-situ growth flower-like structures route on sensing device,which exhibits potential application for detecting trace amounts of TMA gas.展开更多
Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive...Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.61973223,61673367 and 51674067)Liao Ning Revitalization Talents Program(No.XLYC1807198)。
文摘V2O5 flower-like structures assembled by thin nanosheets were in-situ growth on ceramic tubes by hydrothermal process.The structural characterization indicates that V2O5 flower-like structures is orthogonal diamond phase,which entirely covered on the surface of ceramic tubes.TMA sensing measured results revealed that the sensor based on V2O5 flower-like structures exhibited fast reversible and response,good selectivity to TMA and good stability at 200℃.The good sensing performance may be ascribed to flower-like structure s and directly growth sensing film on the ceramic tube without structure damage.Our works give a simple in-situ growth flower-like structures route on sensing device,which exhibits potential application for detecting trace amounts of TMA gas.
基金supported by the National Natural Science Foundation of China (No. 60772019)the National High Technology Research andDevelopment Program of China (No. 2006AA040101-05)the National Science Foundation for Post-doctoral Scientists of China (No.20080440839).
文摘Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.
