An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of stra...An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.展开更多
The transient thermal characteristics of the ridge waveguide InAsP/InGaAsP MQW lasers, especially in various pulse driving conditions,have been simulated by using FEM. The temperature at the active core of the laser v...The transient thermal characteristics of the ridge waveguide InAsP/InGaAsP MQW lasers, especially in various pulse driving conditions,have been simulated by using FEM. The temperature at the active core of the laser versus the time has been calculated as well as pulse width dependence of the apparent thermal resistance.The results show that the thermal characteristics of the lasers are related to both the thermal conductivity and the specific heat of the materials.展开更多
A scheme of synchronized injection multi-quantum-well （MQW） laser system using optical couphng-feedback is presented for performing chaotic dual-directional secure communication. The performance characterization of ...A scheme of synchronized injection multi-quantum-well （MQW） laser system using optical couphng-feedback is presented for performing chaotic dual-directional secure communication. The performance characterization of chaos masking is investigated theoretically, the equation of synchronization demodulation is deduced and its root is also given. Chaos masking encoding with a rate of 5 Gbit/s and a modulation frequency of 1 GHz, chaos modulation with a rate of 0.2 Gbit/s and a modulation frequency of 0.2 GHz and chaos shifting key with a rate of 0.2 Gbit/s are numerically simulated, separately. The ratio of the signal to the absolute synchronous error and the time for achieving synchronous demodulation are analysed in detail. The results illustrate that the system has stronger privacy and good performances so that it can be applied in chaotic dual-directional high rate secure communications.展开更多
利用LASTIP软件理论分析了有源区量子阱数目对不同组分的In Ga As Sb/Al Ga As Sb 2μm半导体激光器能带、电子与空穴浓度分布以及辐射复合率等性能参数的影响。研究表明：量子阱的个数是影响激光器件性能的关键参数,需要综合分析和优...利用LASTIP软件理论分析了有源区量子阱数目对不同组分的In Ga As Sb/Al Ga As Sb 2μm半导体激光器能带、电子与空穴浓度分布以及辐射复合率等性能参数的影响。研究表明：量子阱的个数是影响激光器件性能的关键参数,需要综合分析和优化。量子阱数太少时,量子阱对电子束缚能力弱,电子在p层中泄漏明显,辐射复合率低。量子阱数过多时,载流子在阱内分配不均匀,p型层中电子浓度升高,器件内损耗加大,辐射复合率下降。结合对外延材料质量的分析,In Ga As Sb/Al Ga As Sb半导体激光器有源区最优量子阱数目为2~3。该研究结果可合理地解释已有实验报道,并为2μm半导体激光器结构设计提供理论依据。展开更多
利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较...利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As展开更多
文摘An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.
文摘The transient thermal characteristics of the ridge waveguide InAsP/InGaAsP MQW lasers, especially in various pulse driving conditions,have been simulated by using FEM. The temperature at the active core of the laser versus the time has been calculated as well as pulse width dependence of the apparent thermal resistance.The results show that the thermal characteristics of the lasers are related to both the thermal conductivity and the specific heat of the materials.
文摘A scheme of synchronized injection multi-quantum-well （MQW） laser system using optical couphng-feedback is presented for performing chaotic dual-directional secure communication. The performance characterization of chaos masking is investigated theoretically, the equation of synchronization demodulation is deduced and its root is also given. Chaos masking encoding with a rate of 5 Gbit/s and a modulation frequency of 1 GHz, chaos modulation with a rate of 0.2 Gbit/s and a modulation frequency of 0.2 GHz and chaos shifting key with a rate of 0.2 Gbit/s are numerically simulated, separately. The ratio of the signal to the absolute synchronous error and the time for achieving synchronous demodulation are analysed in detail. The results illustrate that the system has stronger privacy and good performances so that it can be applied in chaotic dual-directional high rate secure communications.
文摘利用LASTIP软件理论分析了有源区量子阱数目对不同组分的In Ga As Sb/Al Ga As Sb 2μm半导体激光器能带、电子与空穴浓度分布以及辐射复合率等性能参数的影响。研究表明：量子阱的个数是影响激光器件性能的关键参数,需要综合分析和优化。量子阱数太少时,量子阱对电子束缚能力弱,电子在p层中泄漏明显,辐射复合率低。量子阱数过多时,载流子在阱内分配不均匀,p型层中电子浓度升高,器件内损耗加大,辐射复合率下降。结合对外延材料质量的分析,In Ga As Sb/Al Ga As Sb半导体激光器有源区最优量子阱数目为2~3。该研究结果可合理地解释已有实验报道,并为2μm半导体激光器结构设计提供理论依据。
文摘利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As
