金刚石/碳化硅复合梯度膜制备研究

采用微波等离子化学气相沉积(MW-PCVD)制备金刚石/碳化硅复合梯度膜.工作气体为H2,CH4和Si[CH3]4(四甲基硅烷,TMS),其中H2∶CH4=100∶0.6,Si[CH3]4为0％-O.05％,沉积压力为3300Pa,基体温度为700℃,微波功率为700W.基体为单晶硅,在沉积前用纳米金刚石颗粒处理.沉积后的样品经扫描电子显微镜(SEM),电子探针显微分析(EPMA),X射线能量损失分析(EDX)表明:沉积膜中的碳化硅含量是随Si[CH3]4流量的变化而改变.通过改变Si[CH3]4的流量可以制备金刚石/碳化硅复合梯度膜,且梯度膜中金刚石与复合膜过渡自然平滑.

Field electron emission of diamond films on nanocrystalline diamond coating by CVD method

The preparation process, structure feature and field electron emission characteristic of diamond films on nanocyrstalline diamond coating by the CVD method were studied. The field electron emission measurements on the samples showed that the diamond films have lower turn-on voltage and higher field emission current density. A further detailed theory explanation to the results was given.